TIC226N

更新时间： 2024-01-01 14:19:46

品牌	Logo	应用领域
COMSET		触发装置三端双向交流开关局域网
页数	文件大小	规格书
3页	207K
描述
SILICON BIDIRECTIONAL TRIODE THYRISTOR

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技术参数
数据手册

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TIC226N 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SFM	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
HTS代码：	8541.30.00.80	风险等级：	5.78
Is Samacsys：	N	外壳连接：	MAIN TERMINAL 2
配置：	SINGLE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大均方根通态电流：	8 A	断态重复峰值电压：	700 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

TIC226N 数据手册

SEMICONDUCTORS

TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,

TIC226N, TIC226S

SILICON BIDIRECTIONAL TRIODE THYRISTOR

•

8 A RMS

70 A Peak

Glass Passivated Wafer

100 V to 800 V Off-State Voltage

Max I_GTof 50 mA (Quadrants 1-3)

High-temperature, High-current and high-voltage applications

Compliance to ROHS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state

to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

ABSOLUTE MAXIMUM RATINGS

Value

Unit

Symbol

Ratings

Repetitive peak off-state voltage

(see Note1)

Full-cycle RMS on-state current at (or

below) 70°C case temperature (see note2)

Peak on-state surge current full-sine-wave

(see Note3)

V_DRM

I_T(RMS)

I_TSM

100 200 300 400 500 600 700 800

Peak on-state surge current half-sine-wave

(see Note4)

Peak gate current

I_TSM

I_GM

± 1

Peak gate power dissipation at (or below)

85°C case temperature (pulse width ≤200

µs)

P_GM

2.2

Average gate power dissipation at (or

below) 85°C case (see Note5)

Operating case temperature range

Storage temperature range

Lead temperature 1.6 mm from case for 10

seconds

P_G(AV)

0.9

T_C

T_stg

-40 to +110

-40 to +125

°C

T_L

230

°C

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