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TIC226D

更新时间： 2024-11-04 20:15:35
品牌 Logo 应用领域
伯恩斯 - BOURNS 三端双向交流开关
页数 文件大小 规格书
4页 175K
描述
4 Quadrant Logic Level TRIAC, 400V V(DRM), 8A I(T)RMS, TO-220AB, TO-220, 3 PIN

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TIC226D 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.18
Is Samacsys：N外壳连接：MAIN TERMINAL 2
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：8 A断态重复峰值电压：400 V
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

TIC226D 数据手册

 浏览型号TIC226D的Datasheet PDF文件第2页浏览型号TIC226D的Datasheet PDF文件第3页浏览型号TIC226D的Datasheet PDF文件第4页 
TIC226 SERIES  
SILICON TRIACS  
8 A RMS  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
MT1  
MT2  
G
1
2
3
Max I of 50 mA (Quadrants 1 - 3)  
GT  
This series is currently available,  
but not recommended for new  
designs.  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC226D  
TIC226M  
TIC226S  
TIC226N  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)  
IT(RMS)  
ITSM  
IGM  
8
A
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)  
Peak gate current  
70  
±1  
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 μs)  
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)  
Operating case temperature range  
PGM  
PG(AV)  
TC  
2.2  
W
W
°C  
°C  
°C  
0.9  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at  
the rate of 320 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge  
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted )  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak  
off-state current  
IDRM  
V
D = rated VDRM  
IG = 0  
TC = 110°C  
±2  
mA  
Vsupply = +12 V†  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
IG = 50 mA  
tp(g) > 20 μs  
6
50  
Gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 μs  
tp(g) > 20 μs  
tp(g) > 20 μs  
-12  
-10  
25  
-50  
-50  
IGT  
mA  
Vsupply = +12 V†  
tp(g) > 20 μs  
0.7  
-0.8  
-0.8  
0.9  
±1.5  
2
-2  
Gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 μs  
tp(g) > 20 μs  
tp(g) > 20 μs  
VGT  
V
V
-2  
2
VT  
On-state voltage  
IT = ±12 A  
(see Note 5)  
±2.1  
† All voltages are with respect to Main Terminal 1.  
APRIL 1971 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
1234

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TIC226D 替代型号

型号 品牌 替代类型 描述 数据表
CQ220I-8D CENTRAL

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