Datasheet > TIC226D

TIC226D

更新时间： 2024-02-28 18:39:46

品牌	Logo	应用领域
伯恩斯 - BOURNS		三端双向交流开关
页数	文件大小	规格书
4页	175K
描述
4 Quadrant Logic Level TRIAC, 400V V(DRM), 8A I(T)RMS, TO-220AB, TO-220, 3 PIN

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中文翻译

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技术参数
数据手册
替代型号

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TIC226D 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.19
Is Samacsys：	N	Base Number Matches：	1

TIC226D 数据手册

TIC226 SERIES

SILICON TRIACS

8 A RMS

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

MT1

MT2

Max I of 50 mA (Quadrants 1 - 3)

This series is currently available,

but not recommended for new

designs.

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC226D

TIC226M

TIC226S

TIC226N

400

600

Repetitive peak off-state voltage (see Note 1)

V_DRM

700

800

Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)

I_T(RMS)

I_TSM

I_GM

Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)

Peak gate current

±1

Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 μs)

Average gate power dissipation at (or below) 85°C case temperature (see Note 4)

Operating case temperature range

P_GM

P_G(AV)

T_C

2.2

°C

0.9

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 1.6 mm from case for 10 seconds

T_L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at

the rate of 320 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge

may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted )

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Repetitive peak

off-state current

I_DRM

_D= rated V_DRM

I_G= 0

T_C= 110°C

±2

V_supply= +12 V†

R_L= 10 Ω

I_G= 50 mA

t_p(g)> 20 μs

Gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 μs

-12

-10

-50

I_GT

V_supply= +12 V†

t_p(g)> 20 μs

0.7

-0.8

0.9

±1.5

-2

Gate trigger

voltage

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 μs

V_GT

-2

V_T

On-state voltage

I_T= ±12 A

(see Note 5)

±2.1

† All voltages are with respect to Main Terminal 1.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

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TIC226D 替代型号

型号	品牌	替代类型	描述	数据表
CQ220I-8D	CENTRAL	功能相似	ISOLATED TAB TRIAC 8.0 AMP 200 THRU 800 VOLTS
CQ220-8D	CENTRAL	功能相似	8.0 AMP TRIAC

与TIC226D相关器件

型号	品牌	获取价格	描述	数据表
TIC226E	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226M	POINN	获取价格	SILICON TRIACS
TIC226M	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226M	NJSEMI	获取价格	Thyristor TRIAC 600V 70A 3-Pin(3+Tab) TO-220
TIC226M-S	BOURNS	获取价格	4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, TO-220, 3 PIN
TIC226N	POINN	获取价格	SILICON TRIACS
TIC226N	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226N	BOURNS	获取价格	4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, TO-220, 3 PIN
TIC226N	NJSEMI	获取价格	Thyristor TRIAC 800V 70A 3-Pin(3+Tab) TO-220
TIC226S	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR

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