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TIC236D

更新时间： 2024-11-03 22:42:15
品牌 Logo 应用领域
POINN 可控硅三端双向交流开关局域网
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5页 108K
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SILICON TRIACS

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TIC236D 技术参数

生命周期：Transferred包装说明：TO-220, 3 PIN
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.73Is Samacsys：N
外壳连接：MAIN TERMINAL 2配置：SINGLE
换向电压的临界上升率-最小值：1.2 V/us最大直流栅极触发电流：50 mA
最大直流栅极触发电压：2 V最大维持电流：40 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大均方根通态电流：12 A重复峰值关态漏电流最大值：2000 µA
断态重复峰值电压：400 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

TIC236D 数据手册

 浏览型号TIC236D的Datasheet PDF文件第2页浏览型号TIC236D的Datasheet PDF文件第3页浏览型号TIC236D的Datasheet PDF文件第4页浏览型号TIC236D的Datasheet PDF文件第5页 
TIC236 SERIES  
SILICON TRIACS  
Copyright © 2000, Power Innovations Limited, UK  
DECEMBER 1971 - REVISED JUNE 2000  
G
G
G
G
G
High Current Triacs  
12 A RMS  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
MT1  
MT2  
G
1
2
3
Max I of 50 mA (Quadrants 1 - 3)  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC236D  
TIC236M  
TIC236S  
TIC236N  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)  
IT(RMS)  
ITSM  
IGM  
12  
A
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)  
Peak gate current  
100  
1
A
Operating case temperature range  
TC  
-40 to +110  
-40 to +125  
230  
°C  
°C  
°C  
Storage temperature range  
Tstg  
TL  
Lead temperature 1.6 mm from case for 10 seconds  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at  
the rate of 300 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = Rated VDRM  
supply = +12 V†  
IG = 0  
TC = 110°C  
2
mA  
V
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
IG = 50 mA  
tp(g) > 20 ms  
12  
-19  
-16  
34  
50  
-50  
-50  
Gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 ms  
IGT  
mA  
V
tp(g) > 20 ms  
tp(g) > 20 ms  
Vsupply = +12 V†  
tp(g) > 20 ms  
0.8  
-0.8  
-0.8  
0.9  
1.4  
22  
2
-2  
Gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 ms  
VGT  
tp(g) > 20 ms  
-2  
tp(g) > 20 ms  
2
VT  
IH  
On-state voltage  
Holding current  
ITM  
supply = +12 V†  
Vsupply = -12 V†  
=
17 A  
(see Note 4)  
Init’ ITM = 100 mA  
Init’ ITM = -100 mA  
2.1  
40  
-40  
V
V
IG = 0  
mA  
IG = 0  
-12  
† All voltages are with respect to Main Terminal 1.  
NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from  
the current carrying contacts are located within 3.2 mm from the device body.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
12345

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