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TIC236N-S PDF预览

TIC236N-S

更新时间： 2024-09-29 20:00:07
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页数 文件大小 规格书
3页 136K
描述
4 Quadrant Logic Level TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, TO-220, 3 PIN

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TIC236N-S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantHTS代码：8541.30.00.80
风险等级：5.7外壳连接：MAIN TERMINAL 2
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED最大均方根通态电流：12 A
断态重复峰值电压：800 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

TIC236N-S 数据手册

 浏览型号TIC236N-S的Datasheet PDF文件第2页浏览型号TIC236N-S的Datasheet PDF文件第3页 
TIC236 SERIES  
SILICON TRIACS  
TO-220 PACKAGE  
High Current Triacs  
12 A RMS  
(TOP VIEW)  
MT1  
MT2  
G
1
2
3
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
Max I of 50 mA (Quadrants 1 - 3)  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
This series is currently available,  
but not recommended for new  
designs.  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC236D  
TIC236M  
TIC236S  
TIC236N  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)  
IT(RMS)  
ITSM  
IGM  
12  
A
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)  
Peak gate current  
100  
±1  
A
Operating case temperature range  
TC  
-40 to +110  
-40 to +125  
230  
°C  
°C  
°C  
Storage temperature range  
Tstg  
TL  
Lead temperature 1.6 mm from case for 10 seconds  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at  
the rate of 300 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
electrical characteristics at 25°C case temperature (unless otherwise noted )  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak  
off-state current  
IDRM  
V
D = Rated VDRM  
IG = 0  
TC = 110°C  
±2  
mA  
Vsupply = +12 V†  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
RL = 10 Ω  
IG = 50 mA  
tp(g) > 20 μs  
12  
-19  
-16  
34  
50  
Gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 μs  
tp(g) > 20 μs  
tp(g) > 20 μs  
-50  
-50  
IGT  
mA  
Vsupply = +12 V†  
tp(g) > 20 μs  
0.8  
-0.8  
-0.8  
0.9  
±1.4  
2
-2  
Gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 μs  
tp(g) > 20 μs  
tp(g) > 20 μs  
VGT  
V
V
-2  
2
VT  
On-state voltage  
ITM = ±17 A  
(see Note 4)  
±2.1  
† All voltages are with respect to Main Terminal 1.  
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from  
the current carrying contacts are located within 3.2 mm from the device body.  
DECEMBER 1971 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
123

中文翻译

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TIC236N-S 替代型号

型号 品牌 替代类型 描述 数据表
MAC210A10G ONSEMI

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