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TIC246B_12 PDF预览

TIC246B_12

更新时间: 2024-11-04 12:03:59
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3页 164K
描述
SILICON BIDIRECTIONAL TRIODE THYRISTOR

TIC246B_12 数据手册

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TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,  
TIC246S  
SILICON BIDIRECTIONAL TRIODE THYRISTOR  
High current triacs  
16 A RMS  
70 A Peak  
Glass Passivated Wafer  
200 V to 800 V Off-State Voltage  
Max IGT of 50 mA (Quadrants 1-3)  
125 A peak current  
Compliance to ROHS  
DESCRIPTION  
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to  
the on-state by either polarity of gate signal with main Terminal 2 at either polarity.  
ABSOLUTE MAXIMUM RATINGS  
Value  
E
Unit  
Symbol  
Ratings  
B
C
D
M
S
N
Repetitive peak off-state voltage  
(see Note1)  
Full-cycle RMS on-state current at  
(or below) 70°C case temperature  
(see note2)  
Peak on-state surge current  
full-sine-wave (see Note3)  
Peak gate current  
Operating case temperature range  
Storage temperature range  
Lead temperature 1.6 mm from  
case for 10 seconds  
VDRM  
IT(RMS)  
ITSM  
200 300 400 500 600 700 800  
V
A
A
16  
125  
IGM  
TC  
Tstg  
± 1  
-40 to +110  
-40 to +125  
A
°C  
°C  
TL  
230  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RJC  
RJA  
Junction to case thermal resistance  
Junction to free air thermal resistance  
1.9  
°C/W  
62.5  
30/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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