5秒后页面跳转
捷配首页

Datasheet > TIC256M
TIC256M PDF预览

TIC256M

更新时间： 2024-11-12 22:42:15
品牌 Logo 应用领域
POINN 可控硅三端双向交流开关局域网
页数 文件大小 规格书
5页 102K
描述
SILICON TRIACS

阅读下载

中文翻译

获取价格

TIC256M 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.74Is Samacsys：N
外壳连接：MAIN TERMINAL 2配置：SINGLE
最大直流栅极触发电流：50 mA最大直流栅极触发电压：2 V
最大维持电流：40 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified最大均方根通态电流：20 A
重复峰值关态漏电流最大值：2000 µA断态重复峰值电压：600 V
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

TIC256M 数据手册

 浏览型号TIC256M的Datasheet PDF文件第2页浏览型号TIC256M的Datasheet PDF文件第3页浏览型号TIC256M的Datasheet PDF文件第4页浏览型号TIC256M的Datasheet PDF文件第5页 
TIC256 SERIES  
SILICON TRIACS  
Copyright © 1997, Power Innovations Limited, UK  
JULY 1991 - REVISED MARCH 1997  
●
●
●
●
●
●
High Current Triacs  
20 A RMS  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
150 A Peak Current  
MT1  
MT2  
G
1
2
3
Max I of 50 mA (Quadrants 1 - 3)  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC256D  
TIC256M  
TIC256S  
TIC256N  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2)  
Peak on-state surge current full-sine-wave (see Note 3)  
Peak gate current  
IT(RMS)  
ITSM  
IGM  
20  
A
A
150  
±1  
A
Operating case temperature range  
TC  
-40 to +110  
-40 to +125  
230  
°C  
°C  
°C  
Storage temperature range  
Tstg  
TL  
Lead temperature 1.6 mm from case for 10 seconds  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at  
the rate of 500 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
MIN  
TYP  
MAX  
PARAMETER  
TEST CONDITIONS  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = Rated VDRM  
supply = +12 V†  
IG = 0  
TC = 110°C  
±2  
mA  
V
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
IG = 50 mA  
tp(g) > 20 ms  
7
50  
-50  
-50  
Peak gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 ms  
-15  
-16  
28  
IGTM  
mA  
V
tp(g) > 20 ms  
tp(g) > 20 ms  
Vsupply = +12 V†  
tp(g) > 20 ms  
0.7  
-0.7  
-0.8  
0.8  
±1.4  
6
2
-2  
Peak gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
tp(g) > 20 ms  
VGTM  
tp(g) > 20 ms  
-2  
tp(g) > 20 ms  
2
VTM  
Peak on-state voltage ITM = ±28.2 A  
supply = +12 V†  
Vsupply = -12 V†  
† All voltages are with respect to Main Terminal 1.  
(see Note 4)  
Init’ ITM = 100 mA  
Init’ ITM = -100 mA  
±1.7  
40  
-40  
V
V
IG = 0  
IH  
Holding current  
mA  
IG = 0  
-13  
NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from  
the current carrying contacts are located within 3.2 mm from the device body.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
12345

中文翻译

下载PDF

与TIC256M相关器件

型号 品牌 获取价格 描述 数据表
TIC256N POINN

获取价格

 		SILICON TRIACS
TIC256S POINN

获取价格

 		SILICON TRIACS
TIC263 POINN

获取价格

 		SILICON TRIACS
TIC263B ETC

获取价格

 		TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TIC263D POINN

获取价格

 		SILICON TRIACS
TIC263D BOURNS

获取价格

 		4 Quadrant Logic Level TRIAC, 400V V(DRM), 25A I(T)RMS
TIC263M POINN

获取价格

 		SILICON TRIACS
TIC263M BOURNS

获取价格

 		4 Quadrant Logic Level TRIAC, 600V V(DRM), 25A I(T)RMS,
TIC263N POINN

获取价格

 		SILICON TRIACS
TIC263N BOURNS

获取价格

 		4 Quadrant Logic Level TRIAC, 800V V(DRM), 25A I(T)RMS,

与TIC256M相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证