Datasheet > TIC253S

TIC253S

更新时间： 2024-11-12 22:42:15

品牌	Logo	应用领域
POINN		栅极可控硅三端双向交流开关
页数	文件大小	规格书
5页	107K
描述
SILICON TRIACS

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TIC253S 数据手册

TIC253 SERIES

SILICON TRIACS

DECEMBER 1971 - REVISED MARCH 1997

●

High Current Triacs

20 A RMS

SOT-93 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

150 A Peak Current

MT1

MT2

Max I of 50 mA (Quadrants 1 - 3)

Pin 2 is in electrical contact with the mounting base.

MDC2AD

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC253D

TIC253M

TIC253S

TIC253N

400

600

Repetitive peak off-state voltage (see Note 1)

V_DRM

700

800

Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)

Peak on-state surge current full-sine-wave (see Note 3)

Peak gate current

I_T(RMS)

I_TSM

I_GM

150

±1

Operating case temperature range

T_C

-40 to +110

-40 to +125

230

°C

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at

the rate of 500 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

electrical characteristics at 25°C case temperature (unless otherwise noted)

MIN

TYP

MAX

PARAMETER

TEST CONDITIONS

UNIT

Repetitive peak

off-state current

I_DRM

V_D= Rated V_DRM

_supply= +12 V†

I_G= 0

T_C= 110°C

±2

R_L= 10 W

I_G= 50 mA

t_p(g)> 20 ms

-50

Peak gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 ms

-15

-16

I_GTM

t_p(g)> 20 ms

V_supply= +12 V†

t_p(g)> 20 ms

0.7

-0.7

-0.8

0.8

±1.4

-2

Peak gate trigger

voltage

V_supply= +12 V†

V_supply= -12 V†

t_p(g)> 20 ms

V_GTM

t_p(g)> 20 ms

-2

t_p(g)> 20 ms

V_TM

Peak on-state voltage I_TM= ±28.2 A

_supply= +12 V†

V_supply= -12 V†

† All voltages are with respect to Main Terminal 1.

(see Note 4)

Init’ I_TM= 100 mA

Init’ I_TM= -100 mA

±1.7

-40

I_G= 0

I_H

Holding current

I_G= 0

-13

NOTE 4: This parameter must be measured using pulse techniques, t_p= £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from

the current carrying contacts are located within 3.2 mm from the device body.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5

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