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TIC226C PDF预览

TIC226C

更新时间: 2024-11-04 05:55:07
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描述
SILICON BIDIRECTIONAL TRIODE THYRISTOR

TIC226C 数据手册

 浏览型号TIC226C的Datasheet PDF文件第2页浏览型号TIC226C的Datasheet PDF文件第3页 
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,  
TIC226N, TIC226S  
SILICON BIDIRECTIONAL TRIODE THYRISTOR  
8 A RMS  
70 A Peak  
Glass Passivated Wafer  
100 V to 800 V Off-State Voltage  
Max IGT of 50 mA (Quadrants 1-3)  
High-temperature, High-current and high-voltage applications  
Compliance to ROHS  
DESCRIPTION  
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state  
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.  
ABSOLUTE MAXIMUM RATINGS  
Value  
Unit  
Symbol  
Ratings  
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage  
(see Note1)  
Full-cycle RMS on-state current at (or  
below) 70°C case temperature (see note2)  
Peak on-state surge current full-sine-wave  
(see Note3)  
VDRM  
IT(RMS)  
ITSM  
100 200 300 400 500 600 700 800  
V
A
A
8
70  
Peak on-state surge current half-sine-wave  
(see Note4)  
Peak gate current  
ITSM  
IGM  
8
A
A
± 1  
Peak gate power dissipation at (or below)  
85°C case temperature (pulse width 200  
µs)  
PGM  
2.2  
W
Average gate power dissipation at (or  
below) 85°C case (see Note5)  
Operating case temperature range  
Storage temperature range  
Lead temperature 1.6 mm from case for 10  
seconds  
PG(AV)  
0.9  
W
TC  
Tstg  
-40 to +110  
-40 to +125  
°C  
°C  
TL  
230  
°C  
Page 1 of 3  

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