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TIC226B PDF预览

TIC226B

更新时间: 2024-11-04 05:55:07
品牌 Logo 应用领域
COMSET 栅极触发装置三端双向交流开关
页数 文件大小 规格书
3页 205K
描述
SILICON BIDIRECTIONAL TRIODE THYRISTOR

TIC226B 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:NBase Number Matches:1

TIC226B 数据手册

 浏览型号TIC226B的Datasheet PDF文件第2页浏览型号TIC226B的Datasheet PDF文件第3页 
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,  
TIC246S  
SILICON BIDIRECTIONAL TRIODE THYRISTOR  
High current triacs  
16 A RMS  
70 A Peak  
Glass Passivated Wafer  
200 V to 800 V Off-State Voltage  
Max IGT of 50 mA (Quadrants 1-3)  
125 A peak current  
Compliance to ROHS  
DESCRIPTION  
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state  
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.  
ABSOLUTE MAXIMUM RATINGS  
Value  
Unit  
Symbol  
Ratings  
B
C
D
E
M
S
N
Repetitive peak off-state voltage  
(see Note1)  
Full-cycle RMS on-state current at (or  
below) 70°C case temperature (see note2)  
Peak on-state surge current full-sine-wave  
(see Note3)  
VDRM  
IT(RMS)  
ITSM  
200 300 400 500 600 700 800  
V
A
A
16  
125  
IGM  
TC  
Tstg  
Peak gate current  
± 1  
-40 to +110  
-40 to +125  
A
°C  
°C  
Operating case temperature range  
Storage temperature range  
Lead temperature 1.6 mm from case for 10  
seconds  
TL  
230  
°C  
Notes:  
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal  
1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate  
linearly to 110°C case temperature at the rate of 400 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated  
value of peak reverse voltage and on-state current. Surge may be repeated after the device has  
returned to original thermal equilibrium.  
Page 1 of 3  

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