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TIC106M PDF预览

TIC106M

更新时间: 2024-11-23 22:19:43
品牌 Logo 应用领域
POINN 可控硅整流器
页数 文件大小 规格书
8页 168K
描述
SILICON CONTROLLED RECTIFIERS

TIC106M 技术参数

生命周期:Transferred包装说明:TO-220, 3 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.65
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SCRBase Number Matches:1

TIC106M 数据手册

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TIC106 SERIES  
SILICON CONTROLLED RECTIFIERS  
Copyright © 1997, Power Innovations Limited, UK  
APRIL 1971 - REVISED MARCH 1997  
5 A Continuous On-State Current  
30 A Surge-Current  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
K
A
G
1
2
3
400 V to 800 V Off-State Voltage  
Max I of 200 µA  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC1ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC106D  
TIC106M  
TIC106S  
TIC106N  
TIC106D  
TIC106M  
TIC106S  
TIC106N  
400  
600  
700  
800  
400  
600  
700  
800  
5
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
Repetitive peak reverse voltage  
VRRM  
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)  
IT(RMS)  
IT(AV)  
A
A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature  
(see Note 3)  
3.2  
Surge on-state current (see Note 4)  
ITM  
IGM  
30  
0.2  
A
Peak positive gate current (pulse width £ 300 ms)  
Peak gate power dissipation (pulse width £ 300 ms)  
Average gate power dissipation (see Note 5)  
Operating case temperature range  
A
PGM  
PG(AV)  
TC  
1.3  
W
W
°C  
°C  
°C  
0.3  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
TL  
Lead temperature 1.6 mm from case for 10 seconds  
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kW.  
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.  
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate  
linearly to zero at 110°C.  
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
5. This value applies for a maximum averaging time of 20 ms.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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