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TIC106N PDF预览

TIC106N

更新时间: 2024-11-27 20:17:43
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网
页数 文件大小 规格书
4页 151K
描述
Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3

TIC106N 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.66
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:1 V
最大维持电流:5 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大漏电流:0.4 mA
通态非重复峰值电流:30 A元件数量:1
端子数量:3最大通态电流:3200 A
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:5 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

TIC106N 数据手册

 浏览型号TIC106N的Datasheet PDF文件第2页浏览型号TIC106N的Datasheet PDF文件第3页浏览型号TIC106N的Datasheet PDF文件第4页 
TIC106 SERIES  
SILICON CONTROLLED RECTIFIERS  
5 A Continuous On-State Current  
30 A Surge-Current  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
K
A
G
1
2
3
400 V to 800 V Off-State Voltage  
Max I of 200 µA  
GT  
This series is obsolete and  
not recommended for new designs.  
Pin 2 is in electrical contact with the mounting base.  
MDC1ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC106D  
TIC106M  
TIC106S  
TIC106N  
TIC1
IC106
TIC106S  
TIC106N  
400  
600  
700  
800  
400  
600  
700  
800  
5
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
Repetitive peak reverse voltage  
VRRM  
V
Continuous on-state current at (or below) 80°C case temperature (see e 2)  
IT(RMS)  
IT(AV)  
A
A
Average on-state current (180° conduction angle) at (or belo) 8casmpature  
(see Note 3)  
3.2  
Surge on-state current at (or below) 25°C (see No4)  
Peak positive gate current (pulse width 300
Peak gate power dissipation (pulse widt30µs)  
Average gate power dissipation (sNot
Operating case temperature ge  
ITSM  
IGM  
30  
0.2  
A
A
PGM  
PG(AV)  
TC  
1.3  
W
W
°C  
°C  
°C  
0.3  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
TL  
Lead temperature 1.6 mm from case for 10 seconds  
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.  
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.  
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate  
linearly to zero at 110°C.  
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
5. This value applies for a maximum averaging time of 20 ms.  
APRIL 1971 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

TIC106N 替代型号

型号 品牌 替代类型 描述 数据表
CS220-8N CENTRAL

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