Datasheet > TIC106N

TIC106N

更新时间： 2024-11-02 22:19:43

品牌	Logo	应用领域
POINN		可控硅整流器
页数	文件大小	规格书
8页	168K
描述
SILICON CONTROLLED RECTIFIERS

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技术参数
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TIC106N 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	风险等级：	5.65
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
触发设备类型：	SCR	Base Number Matches：	1

TIC106N 数据手册

TIC106 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

●

5 A Continuous On-State Current

30 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 200 µA

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC106D

TIC106M

TIC106S

TIC106N

TIC106D

TIC106M

TIC106S

TIC106N

400

600

700

800

400

600

700

800

Repetitive peak off-state voltage (see Note 1)

V_DRM

Repetitive peak reverse voltage

V_RRM

Continuous on-state current at (or below) 80°C case temperature (see Note 2)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 80°C case temperature

(see Note 3)

3.2

Surge on-state current (see Note 4)

I_TM

I_GM

0.2

Peak positive gate current (pulse width £ 300 ms)

Peak gate power dissipation (pulse width £ 300 ms)

Average gate power dissipation (see Note 5)

Operating case temperature range

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply when the gate-cathode resistance R_GK= 1 kW.

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate

linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7 8

中文翻译

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与TIC106N相关器件

型号	品牌	获取价格	描述	数据表
TIC106N-S	BOURNS	获取价格	暂无描述
TIC106S	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC106S	BOURNS	获取价格	Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 700V V(DRM), 700V V(RRM), 1 Element
TIC106S	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC106Y	NJSEMI	获取价格	Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-220
TIC108	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC108A	COMSET	获取价格	Silicon Controlled Rectifier
TIC108B	COMSET	获取价格	Silicon Controlled Rectifier
TIC108C	COMSET	获取价格	Silicon Controlled Rectifier
TIC108D	POINN	获取价格	SILICON CONTROLLED RECTIFIERS

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