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TIC106A_12 PDF预览

TIC106A_12

更新时间: 2024-11-24 12:31:15
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COMSET /
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4页 163K
描述
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

TIC106A_12 数据手册

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TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,  
TIC106N, TIC106S  
P-N-P-N SILICON REVERSE-BLOCKING TRIODE  
THYRISTORS  
5 A Continuous On-State Current  
30 A Surge-Current  
Glass Passivated Wafer  
100 V to 800 V Off-State Voltage  
Max IGT of 200 µA  
Compliance to ROHS  
ABSOLUTE MAXIMUM RATINGS  
Value  
Symbol  
Ratings  
Unit  
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage  
(see Note1)  
VDRM  
VRRM  
IT(RMS)  
100 200 300 400 500 600 700 800  
100 200 300 400 500 600 700 800  
V
V
Repetitive peak reverse voltage  
Continuous on-state current at  
(or below) 80°C case temperature  
(see note2)  
Average on-state current  
(180° conduction angle) at(or below)  
80°C case temperature (see Note3)  
Surge on-state current (see Note4)  
Peak positive gate current  
(pulse width 300 µs)  
5
A
A
IT(AV)  
3.2  
ITM  
IGM  
30  
A
A
0.2  
Peak power dissipation  
(pulse width 300 µs)  
Average gate power dissipation  
(see Note5)  
PGM  
1.3  
0.3  
W
W
PG(AV)  
TC  
Tstg  
Operating case temperature range  
Storage temperature range  
Lead temperature 1.6 mm from case  
for 10 seconds  
-40 to +110  
-40 to +125  
°C  
°C  
TL  
230  
°C  
29/10/2012  
COMSET SEMICONDUCTORS  
1 | 4  

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Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 400V V(DRM), 400V V(RRM), 1 Element