TIC106C

更新时间： 2024-11-03 06:01:19

品牌	Logo	应用领域
COMSET		触发装置可控硅整流器
页数	文件大小	规格书
3页	194K
描述
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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中文翻译

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技术参数
数据手册

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TIC106C 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Is Samacsys：	N	Base Number Matches：	1

TIC106C 数据手册

SEMICONDUCTORS

TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,

TIC106N, TIC106S

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

•

5 A Continuous On-State Current

30 A Surge-Current

Glass Passivated Wafer

100 V to 800 V Off-State Voltage

Max I_GTof 200 µA

Compliance to ROHS

ABSOLUTE MAXIMUM RATINGS

Value

Symbol

Ratings

Unit

Repetitive peak off-state voltage

(see Note1)

V_DRM

V_RRM

I_T(RMS)

100 200 300 400 500 600 700 800

Repetitive peak reverse voltage

Continuous on-state current at (or below)

80°C case temperature (see note2)

Average on-state current (180° conduction

angle) at(or below) 80°C case temperature

(see Note3)

100 200 300 400 500 600 700 800

3.2

I_T(AV)

Surge on-state current (see Note4)

Peak positive gate current (pulse width

≤300 µs)

I_TM

I_GM

0.2

Peak power dissipation (pulse width ≤300

µs)

Average gate power dissipation (see

Note5)

1.3

0.3

P_GM

P_G(AV)

Operating case temperature range

-40 to +110

-40 to +125

T_C

T_stg

°C

Storage temperature range

Lead temperature 1.6 mm from case for 10

seconds

230

T_L

°C

Notes:

1. These values apply when the gate-cathode resistance R_GK= 1kΩ

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to

zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with

resistive load. Above 80°C derate linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated

value of peak reverse voltage and on-state current. Surge may be repeated after the device has

returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

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与TIC106C相关器件

型号	品牌	获取价格	描述	数据表
TIC106D	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC106D	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC106D	TI	获取价格	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106D	BOURNS	获取价格	Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 400V V(DRM), 400V V(RRM), 1 Element
TIC106D	NJSEMI	获取价格	Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-220
TIC106DS	BOURNS	获取价格	SILICON CONTROLLED RECTIFIERS
TIC106D-S	BOURNS	获取价格	Silicon Controlled Rectifier, 3200mA I(T), 400V V(DRM),
TIC106E	TI	获取价格	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106E	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC106F	TI	获取价格	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS