TIC106DS

更新时间： 2024-11-03 12:27:03

品牌	Logo	应用领域
伯恩斯 - BOURNS		可控硅整流器
页数	文件大小	规格书
4页	141K
描述
SILICON CONTROLLED RECTIFIERS

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中文翻译

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数据手册

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TIC106DS 数据手册

TIC106 SERIES

SILICON CONTROLLED RECTIFIERS

5 A Continuous On-State Current

30 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 200 µA

This series is currently available, but

not recommended for new designs.

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC106D

TIC106M

TIC106S

TIC106N

TIC106D

TIC106M

TIC106S

TIC106N

400

600

700

800

400

600

700

800

Repetitive peak off-state voltage (see Note 1)

V_DRM

Repetitive peak reverse voltage

V_RRM

Continuous on-state current at (or below) 80°C case temperature (see Note 2)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 80°C case temperature

(see Note 3)

3.2

Surge on-state current at (or below) 25°C (see Note 4)

Peak positive gate current (pulse width ≤ 300 µs)

Peak gate power dissipation (pulse width ≤ 300 µs)

Average gate power dissipation (see Note 5)

Operating case temperature range

I_TSM

I_GM

0.2

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply when the gate-cathode resistance R_GK= 1 kΩ.

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate

linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

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与TIC106DS相关器件

型号	品牌	获取价格	描述	数据表
TIC106D-S	BOURNS	获取价格	Silicon Controlled Rectifier, 3200mA I(T), 400V V(DRM),
TIC106E	TI	获取价格	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106E	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC106F	TI	获取价格	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106F	NJSEMI	获取价格	Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-220
TIC106M	TI	获取价格	PNP SILICON REVERSE BLOCKING TRIODE THYRISTORS
TIC106M	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC106M	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC106M	NJSEMI	获取价格	Thyristor SCR 600V 30A 3-Pin(3+Tab) TO-220
TIC106N	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS