Datasheet > TGA2214_15

TGA2214_15

更新时间： 2024-09-17 01:22:55

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页数	文件大小	规格书
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描述
2 to 18 GHz 5W GaN Power Amplifier

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中文翻译

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TGA2214_15 数据手册

TGA2214

2 to 18 GHz 5W GaN Power Amplifier

Applications

 Test Equipment

 Electronic Warfare

 Military Radar

Product Features

Functional Block Diagram

 Frequency Range: 2 - 18 GHz

 Pout: > 37 dBm at P_IN= 23 dBm

 PAE: > 20 % at Pin = 23 dBm

 Large Signal Gain (Pin = 23 dBm): > 14 dB

 Small Signal Gain: > 22 dB

 Return Loss: > 7 dB

 Bias: V_D= 22 V, I_DQ= 450 mA, V_G= -2.3 V Typical

 Chip Dimensions: 3 x 5 x 0.10 mm

 Performance under CW operation

General Description

Pad Configuration

TriQuint’s TGA2214 is a wideband power amplifier

fabricated on TriQuint’s TQGaN15 GaN on SiC process.

The TGA2214 operates from 2 – 18 GHz and achieves

5 W of saturated output power with 14 dB of large signal

gain and greater than 20% power-added efficiency .

Pad No.

Symbol

RF_IN

V_G1

V_G2

RF_OUT

V_D2

This combination of wideband power, gain and efficiency

provides system designers the flexibility to improve

system performance while reducing size and cost.

V_D1

The TGA2214 is matched to 50 Ω with integrated DC

blocking capacitors on both RF ports simplifying system

integration; it is ideally suited for electronic warfare, test

instrumentation and radar applications across both

military and commercial markets.

Ordering Information

Part

ECCN

Description

2 - 18 GHz 5W GaN

Power Amplifier

Lead free and RoHS compliant.

TGA2214

3A001.b.2.c

Evaluation Boards are available upon request.

Preliminary Datasheet: 01-26-15

Disclaimer: Subject to change without notice

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