Datasheet > TGA2312-FL

TGA2312-FL

更新时间： 2024-11-10 01:22:55

品牌	Logo	应用领域
TRIQUINT		高功率电源射频微波
页数	文件大小	规格书
13页	533K
描述
X-band 60W GaN Power Amplifier

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TGA2312-FL 数据手册

TGA2312-FL

X-band 60W GaN Power Amplifier

Applications

 Commercial and Military Radar

 Communications

Product Features

Functional Block Diagram

 Frequency Range: 9 – 10 GHz

 P_{SAT :}48 dBm

 PAE: 38%

 Small Signal Gain: 13 dB

 Bias: V_D= 24 V, I_DQ= 2.4 A, V_G= -2.6 V Typical

 Pulsed: PW = 100us, DC = 10%

 Integrated Thermistor Temperature Monitor

 Package Dimensions: 17.4 x 24.0 x 3.9 mm

General Description

Pad Configuration

Pad No.

Symbol

V_G

TriQuint’s TGA2312-FL is a high power amplifier

operating between 9 and 10 GHz and typically providing

48dBm of saturated output power, 38% power-added

efficiency and 13dB small signal gain.

2, 4, 7, 9

N/C

RF IN

Temp (Thermistor)

Ideally suited for marine and weather radar, the

TGA2312-FL is packaged in a CuW-base, flanged

package for superior thermal management.

V_D

RF OUT

V_D

The TGA2312-FL uses TriQuint’s 0.25um GaN on SiC

technology which provides superior performance while

maintaining high reliability. In addition, the use of SiC

substrates provides optimum thermal performance

necessary for reliable high power operation.

Ordering Information

Part ECCN

Lead-free and RoHS compliant.

Description

Evaluation Boards are available upon request.

TGA2312-FL 3A001.b.3.b GaN High Power Amplifier

Preliminary Datasheet: Rev - 08-16-13

Disclaimer: Subject to change without notice

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