Datasheet > TGA2237-SM

TGA2237-SM

更新时间： 2024-11-07 01:22:55

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	820K
描述
0.03 2.5GHz 10W GaN Power Amplifier

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中文翻译

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数据手册

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TGA2237-SM 数据手册

TGA2237-SM

0.03 – 2.5GHz 10W GaN Power Amplifier

Applications

 Commercial and military radar

 Communications

 Electronic Warfare

QFN 5x5 mm 32L

Product Features

Functional Block Diagram

 Frequency Range: 0.03 – 2.5GHz

 P_SAT: >40dBm at PIN = 27dBm

 P1dB: >33dBm

 PAE: >50%

 Large Signal Gain: >13dB

 Small Signal Gain: >19dB

 Input Return Loss: >10dB

 Output Return Loss: >12dB

 Bias: V_D= 32V, I_DQ= 360mA, V_G= -2.6V Typical

 Wideband Flat Power

RF IN5

20RF OUT

 Package Dimensions: 5.0 x 5.0 x 1.45 mm

General Description

Pad Configuration

TriQuint’s TGA2237-SM is

wideband distributed

Pad No.

Symbol

amplifier fabricated on TriQuint’s production 0.25um GaN

on SiC process. The TGA2237-SM operates from 0.03 –

2.5GHz and provides greater than 10W of saturated

output power with greater than 13dB of large signal gain

and greater than 50% power-added efficiency.

1-2, 4, 6, 8-9, 16-17,19, 21, 23-25, 32 GND

3, 7, 10-15, 18, 22, 27-31

RF IN

RF OUT,

DRAIN

The TGA2237-SM is available in a low-cost, surface

mount 32 lead 5x5 AIN QFN. It is ideally suited to

support both radar and communication applications

across defense and commercial markets as well as

electronic warfare. The TGA2237-SM is fully matched to

50Ω at both RF ports allowing for simple system

integration. DC blocks are required on both RF ports and

the drain voltage must be injected through an off chip

bias-tee on the RF output port.

GATE

Ordering Information

Lead-free and RoHS compliant.

Part

ECCN

Description

0.03 – 2.5GHz 10W

GaN Power Amplifier

Evaluation boards are available upon request.

TGA2237-SM

EAR99

Preliminary Datasheet: Rev - 06-03-14

Disclaimer: Subject to change without notice

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