是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.23 |
标称电路换相断开时间: | 40 µs | 关态电压最小值的临界上升速率: | 300 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大漏电流: | 60 mA | 通态非重复峰值电流: | 8000 A |
最大通态电压: | 2.8 V | 最大通态电流: | 750000 A |
最高工作温度: | 125 °C | 最低工作温度: | -45 °C |
断态重复峰值电压: | 1800 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TF70820B | DYNEX |
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Fast Switching Thyristor | |
TF708-20B | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,2KV V(DRM),750A I(T),TO-200AC | |
TF708-20B | MICROSEMI |
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Silicon Controlled Rectifier, 750000mA I(T), 2000V V(DRM), | |
TF709 | DYNEX |
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Fast Switching Thyristor | |
TF709-01A | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,100V V(DRM),900A I(T),TO-200AC | |
TF709-02A | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,200V V(DRM),900A I(T),TO-200AC | |
TF709-02B | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,200V V(DRM),900A I(T),TO-200AC | |
TF709-02Y | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,200V V(DRM),900A I(T),TO-200AC | |
TF709-02Z | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,200V V(DRM),900A I(T),TO-200AC | |
TF709-04A | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,400V V(DRM),900A I(T),TO-200AC |