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TF252TH-4-TL-H PDF预览

TF252TH-4-TL-H

更新时间: 2024-10-14 15:54:15
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
7页 338K
描述
N-Channel JFET, 20V, 140 to 350µA, 1.4mS, VTFP IDSS = 140 to 240 �A, SOT-623 / VTFP, 8000-REEL

TF252TH-4-TL-H 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:1 week
风险等级:5.16配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID):0.001 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

TF252TH-4-TL-H 数据手册

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Ordering number : ENA0842A  
TF252TH  
N-Channel JFET  
http://onsemi.com  
20V, 140 to 350 A, 1.4mS, VTFP  
μ
Features  
High gain : G =1.0dB typ (V =2V, R =2.2k , Cin=5pF, V =10mV, f=1kHz)  
Ω
V
CC  
L
IN  
Ultrasmall package facilitates miniaturization in end products  
Best suited for use in electret condenser microphone for audio equipments and telephones  
Excellent voltage characteristics  
Excellent transient characteristics  
Adoption of FBET process  
Halogen free compliance  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--20  
10  
GDO  
I
mA  
mA  
mW  
G
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
C
C
°
°
Tstg  
--55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: VTFP  
7031A-001  
• JEITA, JEDEC  
: SC-106A  
• Minimum Packing Quantity : 8,000 pcs./reel  
TF252TH-4-TL-H  
TF252TH-5-TL-H  
1.4  
Packing Type: TL  
Marking  
0.25 0.1  
3
0 to 0.02  
D
1
2
TL  
0.2  
0.45  
Electrical Connection  
1
1 : Drain  
1
2
2 : Source  
3 : Gate  
3
3
VTFP  
2
Semiconductor Components Industries, LLC, 2013  
August, 2013  
53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7  

TF252TH-4-TL-H 替代型号

型号 品牌 替代类型 描述 数据表
TF202C SANYO

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N-channel Silicon Junction FET Electret Condenser Microphone Applications

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