Datasheet > TF262TH

TF262TH

更新时间： 2024-10-15 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		放大器光电二极管晶体管
页数	文件大小	规格书
6页	650K
描述
N-Channel JFET

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中文翻译

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TF262TH 数据手册

TF262TH

N-Channel JFET

www.onsemi.com

–

20V, 140 to 350 A, 0.95mS

Features

•

Low Output Noise Voltage : V = 112dB typ. (V =2V, R =2.2k , Cin=5pF)

ꢀ

•

Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm × 1.2mm × 0.34mm

Especially Suited for use in electret condenser microphone for audio equipments and telephones

Adoption of FBET process

Halogen Free compliance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Gate to Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--20

GDO

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

100

150

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Packing Type : TL

Electrical Connection

Marking

TF262TH-4-TL-H

TF262TH-5-TL-H

1 : Drain

2 : Source

3 : Gate

SOT-623 / VTFP

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

©Semiconductor Components Industries, LLC, 2015

Publication Order Number:

March 2015 - Rev. 1

TF262TH/D

12 3 4 5 6

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