Datasheet > 存储 > 闪存> TF28F008SA-100

TF28F008SA-100

更新时间： 2024-10-13 22:25:07

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
33页	467K
描述
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TF28F008SA-100 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSOP1-R, TSSOP40,.8,20
针数：	40	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.86	Is Samacsys：	N
最长访问时间：	100 ns	其他特性：	DEEP POWER-DOWN
命令用户界面：	YES	数据轮询：	NO
JESD-30 代码：	R-PDSO-G40	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	8388608 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	部门数/规模：	16
端子数量：	40	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1-R
封装等效代码：	TSSOP40,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	5 V
编程电压：	12 V	认证状态：	Not Qualified
就绪/忙碌：	YES	反向引出线：	YES
座面最大高度：	1.2 mm	部门规模：	64K
最大待机电流：	0.00002 A	子类别：	Flash Memories
最大压摆率：	0.05 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	MOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	NO	类型：	NOR TYPE
宽度：	10 mm	Base Number Matches：	1

TF28F008SA-100 数据手册

28F008SA

8-MBIT (1-MBIT x 8) FlashFile^TMMEMORY

Extended Temperature Specifications Included

High-Density Symmetrically-Blocked

Architecture

Ð Sixteen 64-Kbyte Blocks

Deep Power-Down Mode

Ð 0.20 mA I Typical

Very High-Performance Read

Ð 85 ns Maximum Access Time

Extended Cycling Capability

Ð 100,000 Block Erase Cycles

Ð 1.6 Million Block Erase

Cycles per Chip

SRAM-Compatible Write Interface

Hardware Data Protection Feature

Ð Erase/Write Lockout during Power

Transitions

Automated Byte Write and Block Erase

Ð Command User Interface

Ð Status Register

Industry Standard Packaging

Ð 40-Lead TSOP, 44-Lead PSOP

System Performance Enhancements

Ð RY/BY Status Output

Ð Erase Suspend Capability

ETOX III Nonvolatile Flash Technology

Ð 12V Byte Write/Block Erase

Intel’s 28F008SA 8-Mbit FlashFile^TMMemory is the highest density nonvolatile read/write solution for sol-

id-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time,

write automation and low power consumption provide a more reliable, lower power, lighter weight and higher

performance alternative to traditional rotating disk technology. The 28F008SA brings new capabilities to porta-

ble computing. Application and operating system software stored in resident flash memory arrays provide

instant-on, rapid execute-in-place and protection from obsolescence through in-system software updates.

Resident software also extends system battery life and increases reliability by reducing disk drive accesses.

For high density data acquisition applications, the 28F008SA offers a more cost-effective and reliable alterna-

tive to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can

take advantage of the 28F008SA’s nonvolatility, blocking and minimal system code requirements for flexible

firmware and modular software designs.

The 28F008SA is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages. Pin assign-

ments simplify board layout when integrating multiple devices in a flash memory array or subsystem. This

device uses an integrated Command User Interface and state machine for simplified block erasure and byte

write. The 28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks.

Intel’s 28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise

immunity. Its 85 ns access time provides superior performance when compared with magnetic storage media.

A deep powerdown mode lowers power consumption to 1 mW typical thru V , crucial in portable computing,

handheld instrumentation and other low-power applications. The RP power control input also provides

absolute data protection during system powerup/down.

Manufactured on Intel’s 0.8 micron ETOX process, the 28F008SA provides the highest levels of quality,

reliability and cost-effectiveness.

*Other brands and names are the property of their respective owners.

Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or

copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make

changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.

November 1995

Order Number: 290429-005

12 3 4 5 6 7...33

中文翻译

下载PDF

与TF28F008SA-100相关器件

型号	品牌	获取价格	描述	数据表
TF28F010-90	INTEL	获取价格	Flash, 128KX8, 90ns, PDSO32, 0.310 X 0.720 INCH, REVERSE, TSOP-32
TF28F020-90	INTEL	获取价格	Flash, 256KX8, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32
TF29-13S-0.4SH(800)	HRS	获取价格	连接器类型:插座;安装间距:0.4 mm;连接器长度(间距方向):6.6 mm;连接器高度
TF29-8S-0.4SH(800)	HRS	获取价格	连接器类型:插座;安装间距:0.4 mm;连接器长度(间距方向):4.6 mm;连接器高度
TF29-9S-0.4SH(800)	HRS	获取价格	连接器类型:插座;安装间距:0.4 mm;连接器长度(间距方向):5.0 mm;连接器高度
TF2-9V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY
TF2-D0AC5	SEIKO	获取价格	Crystal Filter, 1 Function(s), 130.05MHz, 15kHz BW(delta f), Monolithic
TF2-D0AD6	SEIKO	获取价格	1 FUNCTIONS, 130.05 MHz, CRYSTAL FILTER, ROHS COMPLIANT, MINIATURE PACKAGE-6
TF2-H-12V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY
TF2-H-24V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY

与TF28F008SA-100相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

3
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

10
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

15
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

15

产品中心

服务支持

精选活动

关于我们

帮助中心

TF28F008SA-100

TF28F008SA-100 技术参数

TF28F008SA-100 数据手册

与TF28F008SA-100相关器件

与TF28F008SA-100相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TF28F008SA-100

TF28F008SA-100 技术参数

TF28F008SA-100 数据手册

与TF28F008SA-100相关器件

与TF28F008SA-100相关文章

您还可以找

您在本页遇到什么问题？