Datasheet > TF28F020-90

TF28F020-90

更新时间： 2024-10-14 19:49:43

品牌	Logo	应用领域
英特尔 - INTEL		光电二极管内存集成电路
页数	文件大小	规格书
29页	411K
描述
Flash, 256KX8, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32

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技术参数
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TF28F020-90 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSOP1-R, TSSOP32,.8,20
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.92	最长访问时间：	90 ns
其他特性：	100000 ERASE/PROGRAM CYCLES	命令用户界面：	YES
数据轮询：	NO	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	2097152 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	262144 words	字数代码：	256000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	256KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1-R	封装等效代码：	TSSOP32,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	电源：	5 V
编程电压：	12 V	认证状态：	Not Qualified
反向引出线：	YES	座面最大高度：	1.2 mm
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	切换位：	NO
类型：	NOR TYPE	宽度：	8 mm
Base Number Matches：	1

TF28F020-90 数据手册

28F020

2048K (256K x 8) CMOS FLASH MEMORY

Flash Electrical Chip-Erase

Ð 2 Second Typical Chip-Erase

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

Quick-Pulse Programming Algorithm

Ð 10 ms Typical Byte-Program

Ð 4 Second Chip-Program

Noise Immunity Features

Ð Maximum Latch-Up Immunity

10% V

Tolerance

100,000 Erase/Program Cycles

through EPI Processing

12.0V 5% V

ETOX^TMNonvolatile Flash Technology

Ð EPROM-Compatible Process Base

Ð High-Volume Manufacturing

Experience

High-Performance Read

Ð 70 ns Maximum Access Time

CMOS Low Power Consumption

Ð 10 mA Typical Active Current

Ð 50 mA Typical Standby Current

Ð 0 Watts Data Retention Power

JEDEC-Standard Pinouts

Ð 32-Pin Plastic Dip

Ð 32-Lead PLCC

Ð 32-Lead TSOP

(See Packaging Spec., Order 231369)

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after-sale. The 28F020 increases

memory flexibility, while contributing to time-and cost-savings.

The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of 8 bits. Intel’s 28F020 is

offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to JEDEC

standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process

technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to

extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V supply, the 28F020 performs

100,000 erase and program cyclesÐwell within the time limits of the Quick-Pulse Programming and Quick-

Erase algorithms.

Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low

power consumption, and immunity to noise. Its 70 ns access time provides zero wait-state performance for a

wide range of microprocessors and microcontrollers. Maximum standby current of 100 mA translates into

power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved

through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address

and data pins, from 1V to V

1V.

With Intel’s ETOX process base, the 28F020 builds on years of EPROM experience to yield the highest levels

of quality, reliability, and cost-effectiveness.

*Other brands and names are the property of their respective owners.

Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or

copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make

changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.

November 1995

Order Number: 290245-007

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TF28F020-90 替代型号

型号	品牌	替代类型	描述	数据表
CAT28F020TRI-90T	ONSEMI	功能相似	256KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32
M28F201-90N1R	STMICROELECTRONICS	功能相似	2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-90XN3R	STMICROELECTRONICS	功能相似	2 Mb 256K x 8, Chip Erase FLASH MEMORY

与TF28F020-90相关器件

型号	品牌	获取价格	描述	数据表
TF29-13S-0.4SH(800)	HRS	获取价格	连接器类型:插座;安装间距:0.4 mm;连接器长度(间距方向):6.6 mm;连接器高度
TF29-8S-0.4SH(800)	HRS	获取价格	连接器类型:插座;安装间距:0.4 mm;连接器长度(间距方向):4.6 mm;连接器高度
TF29-9S-0.4SH(800)	HRS	获取价格	连接器类型:插座;安装间距:0.4 mm;连接器长度(间距方向):5.0 mm;连接器高度
TF2-9V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY
TF2-D0AC5	SEIKO	获取价格	Crystal Filter, 1 Function(s), 130.05MHz, 15kHz BW(delta f), Monolithic
TF2-D0AD6	SEIKO	获取价格	1 FUNCTIONS, 130.05 MHz, CRYSTAL FILTER, ROHS COMPLIANT, MINIATURE PACKAGE-6
TF2-H-12V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY
TF2-H-24V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY
TF2-H-3V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY
TF2-H-4.5V	NAIS	获取价格	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY

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