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TF202C

更新时间： 2024-10-14 03:28:15
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管光电二极管放大器
页数 文件大小 规格书
5页 48K
描述
N-channel Silicon Junction FET Electret Condenser Microphone Applications

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中文翻译

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TF202C 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.3Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR最大漏极电流 (ID)：0.001 A
FET 技术：JUNCTIONJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

TF202C 数据手册

 浏览型号TF202C的Datasheet PDF文件第2页浏览型号TF202C的Datasheet PDF文件第3页浏览型号TF202C的Datasheet PDF文件第4页浏览型号TF202C的Datasheet PDF文件第5页 
Ordering number : ENA0727  
SANYO Sem iconductors  
DATA S HEET  
N-channel Silicon Junction FET  
Electret Condenser Microphone  
Applications  
TF202C  
Features  
• Especially suited for use in electret condenser microphone for audio equipments and telephones.  
• Ultrasmall package permitting applied sets to be small and slim.  
• Excellent voltage characteristics.  
• Excellent transient characteristics.  
• Adoption of FBET process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
GDO  
--20  
10  
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
G
V
V
=5V, I =1µA  
--0.2  
--0.6  
--1.2  
GS(off)  
DS  
DS  
D
Drain Current  
I
V
=5V, V =0V  
GS  
140*  
350*  
µA  
DSS  
Marking: E  
Continued on next page.  
* : The TF202C is classified by I  
DSS  
as follows : (unit : µA)  
Rank  
E4  
140 to 240  
E5  
I
210 to 350  
DSS  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31407GB TI IM TC-00000549 No. A0727-1/5  
12345

中文翻译

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TF202C 替代型号

型号 品牌 替代类型 描述 数据表
TF252TH-4-TL-H ONSEMI

功能相似

 N-Channel JFET, 20V, 140 to 350µA, 1
TF252TH SANYO

功能相似

 N-channel Silicon Junction FET Electret Condenser Microphone

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TF202-E4-AC3-R UTC

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TF202-E4-AE3-R UTC

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 		Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
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TF202E5 ONSEMI

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 		TRANSISTOR,JFET,N-CHANNEL,210UA I(DSS),EMD3VAR
TF202-E5-AC3-R UTC

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 		Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction

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