Datasheet > TF202C-E5-TL-H

TF202C-E5-TL-H

更新时间： 2024-09-16 21:22:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	58K
描述
TRANSISTOR,JFET,N-CHANNEL,210UA I(DSS),EMD3VAR

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TF202C-E5-TL-H 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
Reach Compliance Code：	compliant	风险等级：	5.59
Base Number Matches：	1

TF202C-E5-TL-H 数据手册

Ordering number : ENA0727

TF202C

SANYO Sem iconductors

DATA S HEET

N-channel Silicon Junction FET

Electret Condenser Microphone

Applications

TF202C

Features

• Especially suited for use in electret condenser microphone for audio equipments and telephones.

• Ultrasmall package permitting applied sets to be small and slim.

• Excellent voltage characteristics.

• Excellent transient characteristics.

• Adoption of FBET process.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Gate-to-Drain Voltage

Symbol

Conditions

Ratings

Unit

GDO

--20

Gate Current

°C

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

100

150

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--20

max

Gate-to-Drain Breakdown Voltage

Cutoff Voltage

=--100µA

(BR)GDO

=5V, I =1µA

--0.2

--0.6

--1.2

GS(off)

Drain Current

=5V, V =0V

140*

350*

µA

DSS

Marking: E

Continued on next page.

* : The TF202C is classified by I

as follows : (unit : µA)

DSS

Rank

140 to 240

210 to 350

DSS

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31407GB TI IM TC-00000549 No. A0727-1/5

12 3 4 5

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与TF202C-E5-TL-H相关器件

型号	品牌	获取价格	描述	数据表
TF202E4	ONSEMI	获取价格	TRANSISTOR,JFET,N-CHANNEL,140UA I(DSS),EMD3VAR
TF202-E4	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
TF202-E4-AC3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
TF202-E4-AE3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
TF202-E4-AN3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
TF202E5	UTC	获取价格	Transistor
TF202E5	ONSEMI	获取价格	TRANSISTOR,JFET,N-CHANNEL,210UA I(DSS),EMD3VAR
TF202-E5-AC3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
TF202-E5-AN3-R	UTC	获取价格	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
TF202E6	ONSEMI	获取价格	TRANSISTOR,JFET,N-CHANNEL,320UA I(DSS),EMD3VAR

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