Datasheet > TF256TH4TL

TF256TH4TL

更新时间： 2024-10-15 04:24:23

品牌	Logo	应用领域
安森美 - ONSEMI		放大器光电二极管晶体管
页数	文件大小	规格书
5页	337K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE, ULTRA SMALL, VTFP, SC-106A, 3 PIN

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TF256TH4TL 数据手册

TF256TH

Ordering number : ENA1617A

SANYO Sem iconductors

DATA S HEET

N-channel Silicon Juncton FET

Electret Condenser Microphone

Applications

TF256TH

Features

•

High gain : G =2.7dB typ (V =2V, R =2.2k , Cin=5pF, V =10mV, f=1kHz)

•

Ultrasmall package facilitates miniaturization in end products

Best suited for use in electret condenser microphone for audio equipments and telephones

Excellent transient characteristics

Adoption of FBET process

Halogen free compliance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Gate-to-Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--20

GDO

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

100

150

Tstg

--55 to +150

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: VTFP

7031-001

• JEITA, JEDEC

: SC-106A

• Minimum Packing Quantity : 8,000 pcs./real

Top View

1.4

0.25

Packing Type: TL

Marking

0.1

0.2

0.45

Electrical Connection

Bottom View

1 : Drain

2 : Source

3 : Gate

SANYO : VTFP

http://semicon.sanyo.com/en/network

10511 TKIM TC-00002535/N2509GB TKIM TC-00002097

No. A1617-1/5

12 3 4 5

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