生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.25 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最大漏极电流 (ID): | 0.001 A |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TF256TH3TL | ONSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN | |
TF256TH-3-TL-H | ONSEMI |
获取价格 |
N-Channel JFET, 20V, 140 to 450uA, 1.7mS, VTFP, SOT-623 / VTFP, 8000-REEL | |
TF256TH4TL | ONSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN | |
TF256TH-5-TL-H | ONSEMI |
获取价格 |
N-Channel JFET, 20V, 140 to 450uA, 1.7mS, VTFP, SOT-623 / VTFP, 8000-REEL | |
TF256THN3 | ONSEMI |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,100UA I(DSS),EMD3VAR | |
TF256THN4 | ONSEMI |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,140UA I(DSS),EMD3VAR | |
TF256THN5 | ONSEMI |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,240UA I(DSS),EMD3VAR | |
TF257 | TAITRON |
获取价格 |
2.5A Fast Recovery Rectifier | |
TF25A60 | APOLLOELECTRON |
获取价格 |
Standard Triac | |
TF2-5V | NAIS |
获取价格 |
SMALL POLARIZED RELAY WITH HIGH SENSITIVITY |