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TF256TH

更新时间: 2024-10-14 08:49:55
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管光电二极管放大器
页数 文件大小 规格书
5页 338K
描述
Electret Condenser Microphone Applications

TF256TH 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.25Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最大漏极电流 (ID):0.001 A
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

TF256TH 数据手册

 浏览型号TF256TH的Datasheet PDF文件第2页浏览型号TF256TH的Datasheet PDF文件第3页浏览型号TF256TH的Datasheet PDF文件第4页浏览型号TF256TH的Datasheet PDF文件第5页 
Ordering number : ENA1617A  
SANYO Sem iconductors  
DATA S HEET  
N-channel Silicon Juncton FET  
Electret Condenser Microphone  
Applications  
TF256TH  
Features  
High gain : G =2.7dB typ (V =2V, R =2.2k , Cin=5pF, V =10mV, f=1kHz)  
Ω
V
CC  
L
IN  
Ultrasmall package facilitates miniaturization in end products  
Best suited for use in electret condenser microphone for audio equipments and telephones  
Excellent transient characteristics  
Adoption of FBET process  
Halogen free compliance  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--20  
10  
GDO  
I
mA  
mA  
mW  
G
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
C
C
°
Tstg  
--55 to +150  
°
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: VTFP  
7031-001  
• JEITA, JEDEC  
: SC-106A  
• Minimum Packing Quantity : 8,000 pcs./real  
Top View  
1.4  
0.25  
3
Packing Type: TL  
Marking  
3
N
2
1
0.1  
TL  
0.2  
1
2
0.45  
Electrical Connection  
1
Bottom View  
3
1 : Drain  
2 : Source  
3 : Gate  
2
SANYO : VTFP  
http://semicon.sanyo.com/en/network  
10511 TKIM TC-00002535/N2509GB TKIM TC-00002097  
No. A1617-1/5  

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