Datasheet > TE28F800B3-T120

TE28F800B3-T120

更新时间： 2024-09-08 22:07:03

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
49页	426K
描述
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

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中文翻译

获取价格

数据手册

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TE28F800B3-T120 数据手册

PRELIMINARY

SMART 3 ADVANCED BOOT BLOCK

WORD-WIDE

4-MBIT (256K X 16), 8-MBIT (512K X 16),

16-MBIT (1024K X 16)

FLASH MEMORY FAMILY

28F400B3, 28F800B3, 28F160B3

Flexible SmartVoltage Technology

2.7V–3.6V Program/Erase

Supports Code Plus Data Storage

Optimized for FDI, Flash Data

Integrator Software

2.7V–3.6V Read Operation

12V V_PPFast Production

Programming

Fast Program Suspend Capability

Fast Erase Suspend Capability

2.7V or 1.8V I/O Option

Extended Cycling Capability

10,000 Block Erase Cycles

Reduces Overall System Power

Optimized Block Sizes

Eight 4-KW Blocks for Data,

Top or Bottom Locations

Up to Thirty-One 32-KW Blocks for

Code

Automated Word Program and Block

Erase

Command User Interface

Status Registers

SRAM-Compatible Write Interface

Automatic Power Savings Feature

High Performance

2.7V–3.6V: 120 ns Max Access Time

Reset/Deep Power-Down

1 µA I_CCTypical

Block Locking

V_CC-Level Control through WP#

Spurious Write Lockout

Low Power Consumption

Standard Surface Mount Packaging

48-Ball µBGA* Package

20 mA Maximum Read Current

Absolute Hardware-Protection

V_PP= GND Option

48-Lead TSOP Package

Footprint Upgradeable

Upgradeable from 2-, 4- and 8-Mbit

Boot Block

V_CCLockout Voltage

Extended Temperature Operation

–40°C to +85°C

ETOX™ V (0.4 µ) Flash Technology

The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4µ technology, represents a feature-

rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability

(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been

added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and

interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.

Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,

monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Word-Wide

products will be available in 48-lead TSOP and 48-ball µBGA* packages. Additional information on this

product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp.

May 1997

Order Number: 290580-002

12 3 4 5 6 7...49

中文翻译

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与TE28F800B3-T120相关器件

型号	品牌	获取价格	描述	数据表
TE28F800B3T150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-T150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3T90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3TA110	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
TE28F800B3TA90	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
TE28F800B5B90	INTEL	获取价格	SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
TE28F800B5-B90	INTEL	获取价格	1MX8 FLASH 5V PROM, 90ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F800B5T90	INTEL	获取价格	SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
TE28F800B5-T90	INTEL	获取价格	1MX8 FLASH 5V PROM, 90ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F800BV-B60	INTEL	获取价格	2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

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