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TE28F800B5T90 PDF预览

TE28F800B5T90

更新时间: 2024-09-08 22:18:51
品牌 Logo 应用领域
英特尔 - INTEL 闪存内存集成电路光电二极管
页数 文件大小 规格书
38页 500K
描述
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT

TE28F800B5T90 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, TSOP-48
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.77最长访问时间:90 ns
其他特性:CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:NO耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,7
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:16K,8K,96K,128K最大待机电流:0.000008 A
子类别:Flash Memories最大压摆率:0.07 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

TE28F800B5T90 数据手册

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ADVANCE INFORMATION  
E
SMART 5 BOOT BLOCK  
FLASH MEMORY FAMILY  
2, 4, 8 MBIT  
28F200B5, 28F400B5, 28F800B5, 28F004B5  
SmartVoltage Technology  
Extended Block Erase Cycling  
100,000 Cycles at Commercial Temp  
10,000 Cycles at Extended Temp  
Smart 5 Flash: 5 V Reads,  
5 V or 12 V Writes  
Increased Programming Throughput  
at 12 V VPP  
Hardware Data Protection Feature  
Absolute Hardware-Protection for  
Boot Block  
Very High-Performance Read  
2-, 4-Mbit: 60 ns Access Time  
8-Mbit: 70 ns Access Time  
Write Lockout during Power  
Transitions  
x8 or x8/x16-Configurable Data Bus  
Automated Word/Byte Program and  
Block Erase  
Low Power Consumption  
Max 60 mA Read Current at 5 V  
Auto Power Savings: <1 mA Typical  
Standby Current  
Command User Interface  
Status Registers  
Erase Suspend Capability  
SRAM-Compatible Write Interface  
Optimized Array Blocking Architecture  
16-KB Protected Boot Block  
Reset/Deep Power-Down Input  
Provides Low-Power Mode and  
Reset for Boot Operations  
Two 8-KB Parameter Blocks  
96-KB and 128-KB Main Blocks  
Top or Bottom Boot Locations  
Pinout Compatible 2, 4, and 8 Mbit  
Extended Temperature Operation  
ETOX™ Flash Technology  
–40 °C to +85 °C  
0.6 µ ETOX IV Initial Production  
0.4 µ ETOX V Later Production  
Industry-Standard Packaging  
40, 48-Lead TSOP, 44-Lead PSOP  
Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density,  
low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically-  
blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for  
embedded code execution applications, such as networking infrastructure and office automation.  
Based on Intel’s boot block architecture, the Smart 5 boot block memory family enables quick and easy  
upgrades for designs that demand state-of-the-art technology. This family of products comes in industry-  
standard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for  
board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.  
December 1997  
Order Number: 290599-004  

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