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TE28F320J3C-110 PDF预览

TE28F320J3C-110

更新时间： 2024-11-13 22:33:23
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
72页 909K
描述
Intel StrataFlash Memory (J3)

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中文翻译

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TE28F320J3C-110 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：14 X 20 MM, TSOP-56
针数：56Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.65最长访问时间：110 ns
备用内存宽度：8命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：R-PDSO-G56JESD-609代码：e0
长度：18.4 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：32
端子数量：56字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP56,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：4/8 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：128K最大待机电流：0.00012 A
子类别：Flash Memories最大压摆率：0.08 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NOR TYPE
宽度：14 mmBase Number Matches：1

TE28F320J3C-110 数据手册

 浏览型号TE28F320J3C-110的Datasheet PDF文件第2页浏览型号TE28F320J3C-110的Datasheet PDF文件第3页浏览型号TE28F320J3C-110的Datasheet PDF文件第4页浏览型号TE28F320J3C-110的Datasheet PDF文件第5页浏览型号TE28F320J3C-110的Datasheet PDF文件第6页浏览型号TE28F320J3C-110的Datasheet PDF文件第7页 
Intel StrataFlash® Memory (J3)  
256-Mbit (x8/x16)  
Datasheet  
Product Features  
■ Performance  
■ Architecture  
—110/115/120/150 ns Initial Access Speed  
—Multi-Level Cell Technology: High  
Density at Low Cost  
—125 ns Initial Access Speed (256 Mbit  
density only)  
—High-Density Symmetrical 128-Kbyte  
Blocks  
—25 ns Asynchronous Page mode Reads  
—256 Mbit (256 Blocks) (0.18µm only)  
—128 Mbit (128 Blocks)  
—64 Mbit (64 Blocks)  
—30 ns Asynchronous Page mode Reads  
(256Mbit density only)  
—32-Byte Write Buffer  
—32 Mbit (32 Blocks)  
—6.8 µs per byte effective  
■ Quality and Reliability  
—Operating Temperature:  
-40 °C to +85 °C  
programming time  
■ Software  
—Program and Erase suspend support  
—100K Minimum Erase Cycles per Block  
—0.18 µm ETOX™ VII Process (J3C)  
—Flash Data Integrator (FDI), Common  
Flash Interface (CFI) Compatible  
■ Security  
—0.25 µm ETOX™ VI Process (J3A)  
■ Packaging and Voltage  
—128-bit Protection Register  
—64-bit Unique Device Identifier  
—64-bit User Programmable OTP Cells  
—56-Lead TSOP Package  
®
—64-Ball Intel Easy BGA Package  
—Lead-free packages available  
®
—48-Ball Intel VF BGA Package (32 and  
—Absolute Protection with VPEN = GND  
—Individual Block Locking  
—Block Erase/Program Lockout during  
Power Transitions  
64 Mbit) (x16 only)  
—VCC 2.7 V to 3.6 V  
=
—VCCQ = 2.7 V to 3.6 V  
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3)  
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-  
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-  
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed  
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future  
devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes  
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components  
are ideal for code and data applications where high density and low cost are required. Examples include  
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.  
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from  
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash®  
memory (28F640J5 and 28F320J5) devices.  
J3 memory components deliver a new generation of forward-compatible software support. By using the  
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density  
upgrades and optimized write capabilities of future Intel StrataFlash® memory devices. Manufactured on Intel®  
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device  
provides the highest levels of quality and reliability.  
Notice: This document contains information on new products in production. The specifications are  
subject to change without notice. Verify with your local Intel sales office that you have the latest  
datasheet before finalizing a design.  
Order Number: 290667-021  
March 2005  
1234567...72

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与TE28F320J3C-110相关器件

型号 品牌 获取价格 描述 数据表
TE28F320J3C110B MICRON

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 		32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory
TE28F320J3C-115 INTEL

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 		Intel StrataFlash Memory (J3)
TE28F320J3C-120 INTEL

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 		Intel StrataFlash Memory (J3)
TE28F320J3C-125 INTEL

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 		Intel StrataFlash Memory (J3)
TE28F320J3C-150 INTEL

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 		Intel StrataFlash Memory (J3)
TE28F320J3D-75 NUMONYX

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 		Numonyx™ Embedded Flash Memory (J3 v. D)
TE28F320J3D75A NUMONYX

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 		Flash, 2MX16, 75ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F320J3D75A MICRON

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 		32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory
TE28F320J3D75B NUMONYX

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 		Flash, 2MX16, 75ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F320J3D75B MICRON

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 		32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory

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