Datasheet > TE28F320S3-100

TE28F320S3-100

更新时间： 2024-11-13 22:08:15

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
52页	1261K
描述
WORD-WIDE FlashFile MEMORY FAMILY

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中文翻译

获取价格

数据手册

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TE28F320S3-100 数据手册

ADVANCE INFORMATION

WORD-WIDE

FlashFile™ MEMORY FAMILY

28F160S3, 28F320S3

Includes Extended Temperature Specifications

Two 32-Byte Write Buffers

Cross-Compatible Command Support

Intel Standard Command Set

2.7 µs per Byte Effective

Programming Time

Common Flash Interface (CFI)

Scaleable Command Set (SCS)

Low Voltage Operation

2.7V or 3.3V V_CC

100,000 Block Erase Cycles

2.7V, 3.3V or 5V V_PP

Enhanced Data Protection Features

Absolute Protection with V_PP= GND

Flexible Block Locking

100 ns Read Access Time (16 Mbit)

110 ns Read Access Time (32 Mbit)

Block Erase/Program Lockout

during Power Transitions

High-Density Symmetrically-Blocked

Architecture

32 64-Kbyte Erase Blocks (16 Mbit)

64 64-Kbyte Erase Blocks (32 Mbit)

Configurable x8 or x16 I/O

Automation Suspend Options

Program Suspend to Read

System Performance Enhancements

STS Status Output

Block Erase Suspend to Program

Block Erase Suspend to Read

Industry-Standard Packaging

µBGA* package, SSOP, and

TSOP (16 Mbit)

ETOX™ V Nonvolatile Flash

Technology

µBGA* package and SSOP (32 Mbit)

Intel’s Word-Wide FlashFile™ memory family provides high-density, low-cost, non-volatile, read/write storage

solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various

densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended

cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.

Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure

code storage applications, such as networking, where code is either directly executed out of flash or

downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection

with V_PPat GND, selective block locking, and program/erase lockout during power transitions. These

alternatives give designers ultimate control of their code security needs.

This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. It comes in the

industry-standard 56-lead SSOP and µBGA packages. In addition, the 16-Mb device is available in the

industry-standard 56-lead TSOP package.

June 1997

Order Number: 290608-001

12 3 4 5 6 7...52

中文翻译

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与TE28F320S3-100相关器件

型号	品牌	获取价格	描述	数据表
TE28F320S3-120	INTEL	获取价格	WORD-WIDE FlashFile MEMORY FAMILY
TE28F400B3	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F400B3-120	INTEL	获取价格	Flash, 256KX16, 120ns, PDSO48, 1.20 MM HEIGHT, TSOP-48
TE28F400B3B110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F400B3B120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3-B120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3B150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3-B150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3B90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F400B3BA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

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