Datasheet > TE28F320J3F105A

TE28F320J3F105A

更新时间： 2024-09-26 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
66页	2203K
描述
32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC)

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TE28F320J3F105A 数据手册

Numonyx^®Embedded Flash Memory (J3 65

nm) Single Bit per Cell (SBC)

32, 64, and 128 Mbit

Datasheet

Product Features

Architecture

Security

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— Enhanced security options for code

protection

— Absolute protection with V_PEN= Vss

— Individual block locking

— 32 Mbit (32 blocks)

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

— Blank Check to verify an erased block

Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 µs per Byte Effective programming

time

64 OTP bits, available for customer

programming

Software

— Program and erase suspend support

— Numonyx^®Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

System Voltage

— V_CC= 2.7 V to 3.6 V

— V_CCQ= 2.7 V to 3.6 V

Packaging

Quality and Reliability

— 56-Lead TSOP

— 64-Ball Easy BGA package

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

208032-03

Jan 2011

Micron Technology, Inc., reserves the right to change products or specifications without notice.

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