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TE28F320J3C110B PDF预览

TE28F320J3C110B

更新时间: 2024-11-15 15:17:39
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
66页 822K
描述
32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory

TE28F320J3C110B 数据手册

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Numonyx™ Embedded Flash Memory (J3 v D)  
32, 64, 128, and 256 Mbit (Monolithic)  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— Symmetrical 128-Kbyte blocks  
— 256 Mbit (256 blocks)  
— 128 Mbit (128 blocks)  
— 64 Mbit (64 blocks)  
— 32 Mbit (32 blocks)  
— Enhanced security options for code  
protection  
— 128-bit Protection Register:  
64-bits Unique device identifier bits  
64-bits User-programmable OTP bits  
— Absolute protection with VPEN = GND  
— Individual block locking  
„ Performance  
— Block erase/program lockout during power  
transitions  
— 75 ns Initial Access Speed (32,64,128  
Mbit densities)  
— 95 ns Initial Access Speed (256Mbit only)  
— 25 ns 8-word and 4-word Asynchronous  
page-mode reads  
„ Software  
— Program and erase suspend support  
— Flash Data Integrator (FDI), Common Flash  
Interface (CFI) Compatible  
— 32-Byte Write buffer;  
4 µs per Byte Effective programming time  
„ Quality and Reliability  
„ System Voltage  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 0.13 µm ETOX™ VIII Process technology  
— VCC = 2.7 V to 3.6 V  
— VCCQ = 2.7 V to 3.6 V  
„ Packaging  
— 56-Lead TSOP (32, 64, 128, 256 Mbit)  
— 64-Ball Numonyx Easy BGA package (32,  
64, 128 and 256 Mbit)  
316577-06  
December 2007  

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