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TE28F320J3D-75 PDF预览

TE28F320J3D-75

更新时间: 2024-11-14 06:01:35
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
68页 913K
描述
Numonyx™ Embedded Flash Memory (J3 v. D)

TE28F320J3D-75 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSSOP, TSSOP56,.8,20
针数:56Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.62Is Samacsys:N
最长访问时间:75 ns备用内存宽度:8
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PDSO-G56
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:32
端子数量:56字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:4/8 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:128K最大待机电流:0.00012 A
子类别:Flash Memories最大压摆率:0.054 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:14 mmBase Number Matches:1

TE28F320J3D-75 数据手册

 浏览型号TE28F320J3D-75的Datasheet PDF文件第2页浏览型号TE28F320J3D-75的Datasheet PDF文件第3页浏览型号TE28F320J3D-75的Datasheet PDF文件第4页浏览型号TE28F320J3D-75的Datasheet PDF文件第5页浏览型号TE28F320J3D-75的Datasheet PDF文件第6页浏览型号TE28F320J3D-75的Datasheet PDF文件第7页 
Numonyx™ Embedded Flash Memory  
(J3 v. D)  
32, 64, 128, and 256 Mbit  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— High-density symmetrical 128-Kbyte blocks  
— 256 Mbit (256 blocks)  
— 128 Mbit (128 blocks)  
— 64 Mbit (64 blocks)  
— 32 Mbit (32 blocks)  
„ Performance  
— Enhanced security options for code  
protection  
— 128-bit Protection Register  
— 64-bit Unique device identifier  
— 64-bit User-programmable OTP cells  
— Absolute protection with VPEN = GND  
— Individual block locking  
— Block erase/program lockout during power  
transitions  
— 75 ns Initial Access Speed (128/64/32  
-Mbit densities)  
— 95 ns Initial Access Speed (256 Mbit only)  
— 25 ns 8-word and 4-word Asynchronous  
page-mode reads  
„ Software  
— Program and erase suspend support  
— 32-Byte Write buffer  
— 4 µs per Byte Effective programming time  
— Flash Data Integrator (FDI), Common Flash  
Interface (CFI) Compatible  
„ Quality and Reliability  
„ System Voltage and Power  
— VCC = 2.7 V to 3.6 V  
— VCCQ = 2.7 V to 3.6 V  
„ Packaging  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 0.13 µm ETOX™ VIII Process  
— 56-Lead TSOP package (32, 64, 128 Mbit  
only)  
— 64-Ball Numonyx Easy BGA package (32,  
42, 128 and 256 Mbit)  
308551-05  
November 2007  

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