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TDA8002CT/A/C1,512 PDF预览

TDA8002CT/A/C1,512

更新时间: 2024-10-29 05:28:23
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管外围集成电路
页数 文件大小 规格书
31页 176K
描述
TDA8002CT

TDA8002CT/A/C1,512 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:28
Reach Compliance Code:unknownHTS代码:8542.31.00.01
风险等级:5.81JESD-30 代码:R-PDSO-G28
长度:17.9 mm端子数量:28
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:2.65 mm
最大供电电压:6.5 V最小供电电压:3 V
标称供电电压:3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:7.5 mm
uPs/uCs/外围集成电路类型:MICROPROCESSOR CIRCUIT

TDA8002CT/A/C1,512 数据手册

 浏览型号TDA8002CT/A/C1,512的Datasheet PDF文件第1页浏览型号TDA8002CT/A/C1,512的Datasheet PDF文件第2页浏览型号TDA8002CT/A/C1,512的Datasheet PDF文件第4页浏览型号TDA8002CT/A/C1,512的Datasheet PDF文件第5页浏览型号TDA8002CT/A/C1,512的Datasheet PDF文件第6页浏览型号TDA8002CT/A/C1,512的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
IC card interface  
TDA8002C  
QUICK REFERENCE DATA  
SYMBOL  
Supplies  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
VDD  
supply voltage  
supply current  
supply current  
supply current  
3.0  
6.5  
150  
5
V
IDD(lp)  
low-power  
µA  
mA  
IDD(idle)  
IDD(active)  
Idle mode; fCLKOUT = 10 MHz  
active mode; VCC(O) = 5 V;  
fCLKOUT = 10 MHz  
fCLK = LOW; ICC = 100 µA  
8
mA  
mA  
mA  
fCLK = 5 MHz; ICC = 10 mA  
CLK = 5 MHz; ICC = 55 mA  
50  
140  
f
active mode; VCC(O) = 3 V;  
fCLKOUT = 10 MHz  
fCLK = LOW; ICC = 100 µA  
fCLK = 5 MHz; ICC = 10 mA  
fCLK = 5 MHz; ICC = 55 mA  
8
mA  
mA  
mA  
50  
140  
Card supply  
VCC(O)  
output voltage  
active mode for VCC = 5 V  
CC < 55 mA; DC load  
I
4.6  
4.6  
5.4  
5.4  
V
V
ICC = 40 nAs; AC load  
active mode for VCC = 3 V  
I
CC < 55 mA; DC load  
2.76  
2.76  
3.24  
3.24  
V
V
ICC = 40 nAs; AC load  
General  
fCLK  
tde  
card clock frequency  
deactivation sequence duration  
continuous total power dissipation  
TDA8002CT/x  
0
12  
MHz  
60  
80  
100  
µs  
Ptot  
Tamb = 25 to +85 °C  
0.56  
0.46  
+85  
W
W
°C  
TDA8002CG  
Tamb = 25 to +85 °C  
Tamb  
ambient temperature  
25  
1999 Oct 12  
3

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