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TC7SH08F_09 PDF预览

TC7SH08F_09

更新时间: 2024-11-21 12:02:55
品牌 Logo 应用领域
东芝 - TOSHIBA
页数 文件大小 规格书
7页 174K
描述
2-Input AND Gate

TC7SH08F_09 数据手册

 浏览型号TC7SH08F_09的Datasheet PDF文件第2页浏览型号TC7SH08F_09的Datasheet PDF文件第3页浏览型号TC7SH08F_09的Datasheet PDF文件第4页浏览型号TC7SH08F_09的Datasheet PDF文件第5页浏览型号TC7SH08F_09的Datasheet PDF文件第6页浏览型号TC7SH08F_09的Datasheet PDF文件第7页 
TC7SH08F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SH08F, TC7SH08FU  
2-Input AND Gate  
Features  
TC7SH08F  
High speed operation  
: t = 4.3ns (typ.) at V  
= 5V, 15pF  
pd  
CC  
Low power dissipation : I  
= 2 μA (max) at Ta = 25°C  
CC  
High noise immunity  
5.5-V tolerant inputs  
: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Wide operating voltage range : V  
= 2 to 5.5 V  
CC  
(SMV)  
TC7SH08FU  
Marking  
Product name  
H 2  
(USV)  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
Pin Assignment (top view)  
V
0.5 to 7  
0.5 to 7  
V
V
CC  
DC input voltage  
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V  
+ 0.5  
V
IN B  
IN A  
GND  
1
2
3
5
V
CC  
OUT  
CC  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
± 20 (Note1)  
± 25  
OK  
I
OUT  
DC V /ground current  
CC  
I
± 50  
4
OUT Y  
CC  
Power dissipation  
P
200  
D
Storage temperature  
Lead temperature (10 s)  
T
65 to 150  
260  
stg  
T
°C  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: VOUT < GND, VOUT > VCC  
1
2009-09-09  

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