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TC58DVG02A5TAI0 PDF预览

TC58DVG02A5TAI0

更新时间: 2024-11-11 21:05:43
品牌 Logo 应用领域
东芝 - TOSHIBA 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
38页 360K
描述
IC 128M X 8 EEPROM 3V, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, Programmable ROM

TC58DVG02A5TAI0 技术参数

生命周期:Active零件包装代码:TSOP1
包装说明:12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.B.1
HTS代码:8542.32.00.51风险等级:5.72
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:1073741824 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:48字数:134217728 words
字数代码:128000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
编程电压:3 V座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:12 mm
Base Number Matches:1

TC58DVG02A5TAI0 数据手册

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TC58DVG02A5TAI0  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
1-GBIT (128M × 8 BITS) CMOS NAND E2PROM  
DESCRIPTION  
The TC58DVG02A5 is a 1-Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only  
2
Memory (NAND E PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static  
register which allows program and read data to be transferred between the register and the memory cell array in  
528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes ×  
32 pages).  
The TC58DVG02A5 is a serial-type memory device which utilizes the I/O pins for both address and data  
input/output as well as for command inputs. The Erase and Program operations are automatically executed making  
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still  
cameras and other systems which require high-density non-volatile memory data storage.  
FEATURES  
Organization  
Memory cell allay  
Register  
528 × 256K × 8  
528 × 8  
Page size  
528 bytes  
Block size  
(16K + 512) bytes  
Modes  
Read, Reset, Auto Page Program, Auto Block Erase, Status Read  
Mode control  
Serial input/output  
Command control  
Number of valid blocks  
Min 8032 blocks  
Max 8192 blocks  
Power supply  
V : 2.7 V to 3.6 V  
CC  
Access time  
Cell array to register 25 μs max  
Serial Read Cycle  
40 ns min  
Program/Erase time  
Auto Page Program  
Auto Block Erase  
300 μs/page typ.  
2.5 ms/block typ.  
Operating current  
Read (40 ns cycle)  
Program (avg.)  
Erase (avg.)  
20 mA max.  
20 mA max.  
20 mA max.  
50 μA max  
Standby  
Package  
TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)  
1
2010-07-13  

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