Datasheet > TC58DVM72F1FT00

TC58DVM72F1FT00

更新时间： 2024-11-10 22:09:47

品牌	Logo	应用领域
东芝 - TOSHIBA		可编程只读存储器
页数	文件大小	规格书
34页	366K
描述
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TC58DVM72F1FT00 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP1	包装说明：	TSOP1,
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.1.B.1	HTS代码：	8542.32.00.51
风险等级：	5.89	备用内存宽度：	8
JESD-30 代码：	R-PDSO-G48	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	134217728 bit
内存集成电路类型：	EEPROM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	8388608 words	字数代码：	8000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	8MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	SERIAL	峰值回流温度（摄氏度）：	240
编程电压：	3 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	12 mm	Base Number Matches：	1

TC58DVM72F1FT00 数据手册

TC58DVM72A1FT00/ TC58DVM72F1FT00

TC58DAM72A1FT00/ TC58DAM72F1FT00

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND E²PROM

DESCRIPTION

The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

Read-Only Memory (NAND E PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses

dual power supplies (2.7 V to 3.6 V for V

and 1.65 V to 1.95 V for V

). The device has a 528-byte/264-words

CCQ

static register which allows program and read data to be transferred between the register and the memory cell array

in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes ꢀ 512 bytes:

528 bytes u 32 pages/8k words + 256 words:264 words x 32 pages).

The TC58DxM72x1xxxx is a serial-type memory device which utilizes the I/O pins for both address and data

input/output as well as for command inputs. The Erase and Program operations are automatically executed making

the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still

cameras and other systems which require high-density non-volatile memory data storage.

FE_OA_r_MT_gaU_e_n_mR_iz_o_aE_ry_tS_io_ce_n_{ll allay 528 u 32K u 8}

xꢁ

TC58DxM72A1xxxx

TC58DxM72F1xxxx

264 x 32k x 16

264 x 16

528 u 8

Page size

Block size

528 bytes

264 words

(16K ꢀ 512) bytes

(8k + 256) words

xꢁ Modes

Read, Reset, Auto Page Program

Auto Block Erase, Status Read

xꢁ Mode control

Serial input/output

Command control

xꢁ Power supplyꢀ ꢀ ꢀ ꢀ TC58DVM72x1xxxx

TC58DAM72x1xxxx

2.7V to 3.6V

Vcc:

2.7V to 3.6V

Vccq:

1.65V to 1.95V

xꢁ Program/Erase Cycles 1E5 cycle (with ECC)

xꢁ Access time

Cell array to register 25 Ps max

Serial Read Cycle

50 ns min

xꢁ Operating current

Read (50 ns cycle) 10 mA typ.

Program (avg.)

Erase (avg.)

Standby

10 mA typ.

50 PA max.

xꢁ Package

TSOP I 48-P-1220-0.50 (Weight:0.53g typ)

000707EBA1

xꢁTOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,

when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid

situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to

property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most

recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide

for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

xꢁThe TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control

instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

xꢁThe products described in this document are subject to the foreign exchange and foreign trade laws.

xꢁThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

xꢁThe information contained herein is subject to change without notice.

2003-01-24 1/34

12 3 4 5 6 7...34

中文翻译

下载PDF

与TC58DVM72F1FT00相关器件

型号	品牌	获取价格	描述	数据表
TC58DVM82A1FT00	TOSHIBA	获取价格	128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
TC58DVM82A1XBJ1	TOSHIBA	获取价格	IC 32M X 8 EEPROM 3V, PBGA56, 7 X 10 MM, 0.80 MM PITCH, PLASTIC, TFBGA-56, Programmable RO
TC58DVM82F1FT00	TOSHIBA	获取价格	128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
TC58DVM92A1FT00	TOSHIBA	获取价格	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58DVM92A1FTI0	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58DVM92A1TG00	TOSHIBA	获取价格	TC58DVM92A1TG00
TC58DVM92A3BAJW	TOSHIBA	获取价格	TC58DVM92A3BAJW
TC58DVM92A3TA00	TOSHIBA	获取价格	IC EEPROM 3V, PDSO48, 12 X 20 MM, 0.5 MM PITCH, PLASTIC, TSOPI-48, Programmable ROM
TC58DVM92A5BAJ3	TOSHIBA	获取价格	IC 64M X 8 FLASH 3.3V PROM, PBGA63, 8 X 13 MM, 0.80 MM PITCH, PLASTIC, TFBGA-63, Programma
TC58DVM92A5TA00	TOSHIBA	获取价格	IC 64M X 8 EEPROM 3V, 40 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, Program

与TC58DVM72F1FT00相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

TC58DVM72F1FT00

TC58DVM72F1FT00 技术参数

TC58DVM72F1FT00 数据手册

与TC58DVM72F1FT00相关器件

与TC58DVM72F1FT00相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TC58DVM72F1FT00

TC58DVM72F1FT00 技术参数

TC58DVM72F1FT00 数据手册

与TC58DVM72F1FT00相关器件

与TC58DVM72F1FT00相关文章

您还可以找

您在本页遇到什么问题？