Datasheet > TC55VZM216AJJN-10

TC55VZM216AJJN-10

更新时间： 2024-11-08 08:53:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	186K
描述
262,144-WORD BY 16-BIT CMOS STATIC RAM

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TC55VZM216AJJN/AFTN08,10,12

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

262,144-WORD BY 16-BIT CMOS STATIC RAM

DESCRIPTION

The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as

262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

speed, it operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a

low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide

lower and upper byte access. This device is well suited to cache memory applications where high-speed access and

high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The

TC55VZM216AJJN/AFTN is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface

assembly.

FEATURES

•

Single power supply voltage of 3.3 V 0.3 V

Fully static operation

•

Fast access time (the following are maximum values)

TC55VZM216AJJN/AFTN08:8 ns

All inputs and outputs are LVTTL compatible

Output buffer control using OE

Data byte control using LB (I/O1 to I/O8) and

UB (I/O9 to I/O16)

TC55VZM216AJJN/AFTN10:10 ns

TC55VZM216AJJN/AFTN12:12 ns

•

Low-power dissipation (I_DDO2

)

(the following are maximum values)

•

Package:

Cycle Time

SOJ44-P-400-1.27 (AJJN)

(Weight: 1.64 g typ)

TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ)

Operation (max) 140

130

120

Standby:4 mA (both devices)

PIN ASSIGNMENT (TOP VIEW)

44 PIN SOJ 44 PIN TSOP

PIN NAMES

A0 to A17

Address Inputs

44 A5

43 A6

42 A7

I/O1 to I/O16 Data Inputs/Outputs

Chip Enable Input

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power (+3.3 V)

I/O1

38 I/O16

37 I/O15

36 I/O14

35 I/O13

34 GND

33 V^DD

I/O1

I/O16

I/O15

I/O14

I/O13

GND

V^DD

I/O2

I/O3

I/O2

I/O3

I/O4

V^DD

I/O4 10

V^DD11

LB , UB

GND 12

I/O5 13

I/O6 14

I/O7 15

I/O8 16

GND

I/O5

I/O6

I/O7

I/O8

A15

A14

A13

A12

A16

32 I/O12

31 I/O11

30 I/O10

29 I/O9

28 NU

27 A8

26 A9

25 A10

24 A11

23 A17

I/O12

I/O11

I/O10

I/O9

GND

Ground

Not Usable (Input)

A15 18

A14 19

A13 20

A12 21

A16 22

A10

A11

A17

(TC55VZM216AFTN)

(TC55VZM216AJJN)

2003-01-17 1/11

12 3 4 5 6 7...11

中文翻译

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与TC55VZM216AJJN-10相关器件

型号	品牌	获取价格	描述	数据表
TC55VZM216AJJN12	TOSHIBA	获取价格	262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55VZM216AJJN-12	TOSHIBA	获取价格	262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55VZM216ATGI08	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 8 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44, Stati
TC55VZM216ATGI10	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 10 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44, Stat
TC55VZM216ATGI12	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 12 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44, Stat
TC55VZM216ATGN12	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 12 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44, Stat
TC55W1600FT	TOSHIBA	获取价格	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W1600FT-55	TOSHIBA	获取价格	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W1600FT-70	TOSHIBA	获取价格	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W1600XB7	TOSHIBA	获取价格	IC 1M X 16 STANDARD SRAM, 85 ns, PBGA48, 10 X 12 MM, 0.80 MM PITCH, PLASTIC, FBGA-48, Stat

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