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TC51WHM616AXBN70 PDF预览

TC51WHM616AXBN70

更新时间: 2024-01-19 20:16:40
品牌 Logo 应用领域
东芝 - TOSHIBA 存储内存集成电路静态存储器
页数 文件大小 规格书
11页 200K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC51WHM616AXBN70 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.91
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
长度:11 mm内存密度:67108864 bit
内存集成电路类型:PSEUDO STATIC RAM内存宽度:16
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:4MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.7/3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.0001 A
子类别:Other Memory ICs最大压摆率:0.05 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.6 V
标称供电电压 (Vsup):2.75 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

TC51WHM616AXBN70 数据手册

 浏览型号TC51WHM616AXBN70的Datasheet PDF文件第1页浏览型号TC51WHM616AXBN70的Datasheet PDF文件第3页浏览型号TC51WHM616AXBN70的Datasheet PDF文件第4页浏览型号TC51WHM616AXBN70的Datasheet PDF文件第5页浏览型号TC51WHM616AXBN70的Datasheet PDF文件第6页浏览型号TC51WHM616AXBN70的Datasheet PDF文件第7页 
TC51WHM616AXBN65,70  
BLOCK DIAGRAM  
CE  
A9  
A10  
A11  
A12  
A13  
A14  
A15  
A16  
A17  
A18  
A19  
A20  
A21  
V
DD  
GND  
MEMORY CELL ARRAY  
8,192 × 512 × 16  
(67,108,864)  
I/O1  
I/O2  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O8  
SENSE AMP  
I/O9  
I/O10  
I/O11  
I/O12  
I/O13  
I/O14  
I/O15  
I/O16  
COLUMN ADDRESS  
DECODER  
COLUMN ADDRESS  
BUFFER  
REFRESH  
ADDRESS  
COUNTER  
REFRESH  
CONTROL  
A0 A1 A2 A3 A4 A5 A6 A7 A8  
CONTROL SIGNAL  
GENERATOR  
CE  
WE  
OE  
UB  
LB  
CE1  
CE  
CE2  
OPERATION MODE  
MODE  
CE1  
CE2  
OE  
WE  
LB  
UB  
Add  
I/O1 to I/O8  
I/O9 to I/O16  
POWER  
Read(Word)  
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
L
H
L
X
X
X
X
X
X
X
X
X
D
D
D
I
I
I
I
I
I
I
OUT  
OUT  
DDO  
DDO  
DDO  
DDO  
DDO  
DDO  
DDO  
Read(Lower Byte)  
Read(Upper Byte)  
Write(Word)  
High-Z  
OUT  
L
H
L
High-Z  
D
OUT  
X
X
X
H
X
X
L
D
D
D
IN  
IN  
IN  
Write(Lower Byte)  
Write(Upper Byte)  
Outputs Disabled  
Standby  
L
L
H
L
Invalid  
L
H
X
X
X
Invalid  
High-Z  
High-Z  
High-Z  
D
IN  
H
X
X
X
X
X
High-Z  
High-Z  
High-Z  
I
DDS  
Deep Power-down Standby  
I
DDSD  
Notes: L = Low-level Input(V ), H = High-level Input(V ), X = V or V , High-Z = High-impedance  
IL  
IH  
IH  
IL  
2002-08-22 2/11  

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