TC271
1080 × 580-PIXEL CCD IMAGE SENSOR
SOCS039A – JANUARY 1994 – REVISED JUNE 1996
DUAL-IN-LINE PACKAGE
(TOP VIEW)
•
High-Resolution, Solid-State Monochrome
Image Sensor for Video or Still-Picture
Photography
•
•
•
Frame Transfer With Two Field Memories
Allows Multimode Operation
1
2
3
4
5
6
7
8
22
21
20
19
18
17
SUB
TDB
ABG
IAG
SUB
ABG
1044 (H) x 576 (V) Active Elements in
Image-Sensing Area
IAG
11-mm Image-Area Diagonal Is Compatible
With 2/3” Vidicon Optics
SAG1
ADB
TMG
SAG2
•
•
•
•
•
Fast-Clear Capability
OUT3
OUT2
OUT1
AMP GND
CDB
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Photoresponse Uniformity
16 SRG3
15
14
13
12
SRG2
SRG1
TRG
9
On-Chip Cross-Coupled Resets for Easy
Off-Chip Implementation of CCSH Video-
Signal Processing
10
11
SUB
SUB
•
•
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
Low Dark Current
description
The TC271 is a frame-transfer charge-coupled-device (CCD) image sensor with two field memories. It is
suitable for use in PAL-video or still-picture photography applications. Its image-sensing area is configured into
580 lines; 576 of these are active and the remaining four are used for dark reference. Each line is configured
into 1080 pixels with 1044 active and 36 for dark reference. The TC271 has a standard aspect ratio of 4:3 and
a standard 11-mm image-sensing-area diagonal. Its blooming protection, which is an integral part of each pixel,
is based on electron-hole recombination and is activated by clocking the antiblooming gate.
One important aspect of the TC271 high-resolution sensor is its ability to simultaneously capture both fields of
a TV frame. Its two independently addressable memories allow separate storage of each field and operation
in a variety of modes, including CCIR with true interlace, CCIR with pseudointerlace, progressive scan, and
nonstandard pseudointerlace with a resolution of 1152 lines.
A unique multiplexer section (see Figure 1) rearranges the horizontal pixels into vertical groups of three and
separates and loads the image into the two field memories. The independent addressing of each field memory
provides flexibility for different modes of operation. The interdigitated layout of the memories allows each
memory to share the same bank of three serial registers and associated charge-detection amplifiers (see
Figure 2 and the functional block diagram). Each register and associated amplifier reads out every third column
of the image area (see Figure 3). The three amplifiers are optimized dual-source followers that allow the use
of off-chip double correlated-clamp sample-and-hold amplifiers for removing KTC noise.
The TC271 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC271 is
characterized for operation from –10°C to 40°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright 1996, Texas Instruments Incorporated
ADVANCE INFORMATION concerns new products in the sampling or
preproduction phase of development. Characteristic data and other
specifications are subject to change without notice.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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