TC277-20

更新时间： 2024-01-15 14:54:19

品牌	Logo	应用领域
德州仪器 - TI		模拟IC 传感器图像传感器信号电路
页数	文件大小	规格书
19页	297K
描述
735- 】 580-PIXEL CCD IMAGE SENSOR

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技术参数
数据手册

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TC277-20 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DIP
包装说明：	1.78 MM PITCH, WINDOWED, CERAMIC, DIP-20	针数：	20
Reach Compliance Code：	not_compliant	HTS代码：	8542.39.00.01
风险等级：	5.61	Is Samacsys：	N
模拟集成电路 - 其他类型：	ANALOG CIRCUIT	JESD-30 代码：	R-CDIP-T20
功能数量：	1	端子数量：	20
最高工作温度：	45 °C	最低工作温度：	-10 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	WSDIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE, WINDOW, SHRINK PITCH
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	5.79 mm	标称供电电压 (Vsup)：	12 V
表面贴装：	NO	温度等级：	COMMERCIAL
端子形式：	THROUGH-HOLE	端子节距：	1.778 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	15.24 mm	Base Number Matches：	1

TC277-20 数据手册

TC277

735- × 580-PIXEL CCD IMAGE SENSOR

SOCS020B – DECEMBER 1991

DUAL-IN-LINE PACKAGE

(TOP VIEW)

•

High-Resolution, Solid-State Image Sensor

for PAL B/W TV Applications

8-mm Image-Area Diagonal, Compatible

With 1/2” Vidicon Optics

SUB 1

IAG 2

ABG 3

20 SUB

19 IAG

699 (H) x 288 (V) Active Elements in

Image-Sensing Area

18 ABG

17 SAG

16 IDB

15 SRG3

14 SRG2

13 SRG1

12 TRG

11 CDB

TDB 4

OUT3 5

OUT2 6

OUT1 7

AMP GND 8

ADB 9

•

Low Dark Current

Electron-Hole Recombination Antiblooming

Dynamic Range . . . More Than 70 dB

High Sensitivity

High Photoresponse Uniformity

High Blue Response

SUB 10

Single-Phase Clocking

Solid-State Reliability With No Image

Burn-in, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

description

The TC277 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W

PAL TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small

size, high reliability, and low cost.

The image-sensing area of the TC277 is configured into 288 lines with 699 elements in each line. Thirty-three

elements are provided in each line for dark reference. The blooming-protection feature incorporated into the

sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This

antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each

image-sensing element.

The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements

by one-half of a vertical line during the charge-integration period in alternate fields, and effectively increasing

the vertical resolution and minimizing aliasing. The device can also be run as a 732 (H) by 288 (V) noninterlaced

sensor with significant reduction in the dark signal. The image is read out through three outputs, each of which

reads out every third column.

Agatedfloating-diffusiondetectionstructurewithanautomaticresetandvoltagereferenceincorporatedon-chip

converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and

provides high output-drive capability.

The TC277 is built using TI-proprietary virtual-phase technology, which provides devices with high blue

response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC277 is

characterized for operation from –10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...19

中文翻译

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与TC277-20相关器件

型号	品牌	获取价格	描述	数据表
TC277-30	TI	获取价格	735- 】 580-PIXEL CCD IMAGE SENSOR
TC27740	TI	获取价格	735- 】 580-PIXEL CCD IMAGE SENSOR
TC277T64F200SCAKXUMA1	INFINEON	获取价格	Microcontroller, 32-Bit, FLASH, 200MHz, CMOS, PBGA292, LFBGA-292
TC277TP64F200SCAKXUMA1	INFINEON	获取价格	Microcontroller, 32-Bit, FLASH, 200MHz, CMOS, PBGA292, LFBGA-292
TC27C203-55V05	INTEL	获取价格	UVPROM, 16KX16, 50ns, CMOS, CDIP40
TC27C203C45V05	INTEL	获取价格	UVPROM, 16KX16, 40ns, CMOS, CDIP40
TC27C203C55V10	INTEL	获取价格	UVPROM, 16KX16, 50ns, CMOS, CDIP40
TC27V	TAK_CHEONG	获取价格	500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
TC27V	TC	获取价格	TCxx Series
TC27V.TB	TAK_CHEONG	获取价格	Zener Diode, 27V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PA

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