Datasheet > TC27740

TC27740

更新时间： 2024-02-20 12:17:03

品牌	Logo	应用领域
德州仪器 - TI		传感器图像传感器
页数	文件大小	规格书
19页	297K
描述
735- 】 580-PIXEL CCD IMAGE SENSOR

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TC27740 数据手册

TC277

735- × 580-PIXEL CCD IMAGE SENSOR

SOCS020B – DECEMBER 1991

DUAL-IN-LINE PACKAGE

(TOP VIEW)

•

High-Resolution, Solid-State Image Sensor

for PAL B/W TV Applications

8-mm Image-Area Diagonal, Compatible

With 1/2” Vidicon Optics

SUB 1

IAG 2

ABG 3

20 SUB

19 IAG

699 (H) x 288 (V) Active Elements in

Image-Sensing Area

18 ABG

17 SAG

16 IDB

15 SRG3

14 SRG2

13 SRG1

12 TRG

11 CDB

TDB 4

OUT3 5

OUT2 6

OUT1 7

AMP GND 8

ADB 9

•

Low Dark Current

Electron-Hole Recombination Antiblooming

Dynamic Range . . . More Than 70 dB

High Sensitivity

High Photoresponse Uniformity

High Blue Response

SUB 10

Single-Phase Clocking

Solid-State Reliability With No Image

Burn-in, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

description

The TC277 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W

PAL TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small

size, high reliability, and low cost.

The image-sensing area of the TC277 is configured into 288 lines with 699 elements in each line. Thirty-three

elements are provided in each line for dark reference. The blooming-protection feature incorporated into the

sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This

antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each

image-sensing element.

The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements

by one-half of a vertical line during the charge-integration period in alternate fields, and effectively increasing

the vertical resolution and minimizing aliasing. The device can also be run as a 732 (H) by 288 (V) noninterlaced

sensor with significant reduction in the dark signal. The image is read out through three outputs, each of which

reads out every third column.

Agatedfloating-diffusiondetectionstructurewithanautomaticresetandvoltagereferenceincorporatedon-chip

converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and

provides high output-drive capability.

The TC277 is built using TI-proprietary virtual-phase technology, which provides devices with high blue

response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC277 is

characterized for operation from –10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...19

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TC27V.TR	TAK_CHEONG	获取价格	Zener Diode, 27V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PA
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