Datasheet > TC2876

TC2876

更新时间： 2024-02-13 09:19:47

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
2页	52K
描述
5 W Low-Cost Packaged PHEMT GaAs Power FETs

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数据手册

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TC2876 数据手册

TC2876

REV4_20070507

5 W Low-Cost Packaged PHEMT GaAs Power FETs

FEATURES

PHOTO ENLARGEMENT

• 5 W Typical Output Power at 6 GHz

• 7 dB Typical Linear Power Gain at 6 GHz

• High Linearity: IP3 = 47 dBm Typical at 6 GHz

• High Power Added Efficiency:

Nominal PAE of 40 % at 6 GHz

• Suitable for High Reliability Application

• Breakdown Voltage: BV_DGO≥ 18 V

• Lg = 0.6 µm, Wg = 12 mm

• Tight Vp ranges control

• High RF input power handling capability

• 100 % DC Tested

• Low Cost Ceramic Package

DESCRIPTION

The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs

Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All

devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power

amplifiers for commercial and military high performance power applications.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

MIN TYP MAX UNIT

Symbol

CONDITIONS

36.5

dBm

P_1dBOutput Power at 1dB Gain Compression Point , f = 6 GHz V_DS= 8 V, I_DS= 1200 mA

G_L

Linear Power Gain, f = 6 GHz V_DS= 8 V, I_DS= 1200 mA

Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS= 8 V, I_DS= 1200 mA, *P_SCL= 23 dBm

dBm

IP3

PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz

I_DSSSaturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

2000

-1.7**

g_m

V_P

Transconductance at V_DS= 2 V, V_GS= 0 V

Pinch-off Voltage at V_DS= 2 V, I_D= 24 mA

Volts

°C/W

BV_DGODrain-Gate Breakdown Voltage at I_DGO=6 mA

R_thThermal Resistance

Note: * P_SCL: Output Power of Single Carrier Level.

3.5

** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement

(1)TC2876P1519 : Vp = -1.5V to -1.9V (2)TC2876P1620 : Vp = -1.6V to -2.0V (3)TC2876P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1/2

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与TC2876相关器件

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TC2896	TRANSCOM	获取价格	5 W Flange Ceramic Packaged GaAs Power FETs
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TC28C43EPA	TELCOM	获取价格	BiCMOS CURRENT MODE PWM CONTROLLERS
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