Datasheet > TC281

TC281

更新时间： 2024-09-26 22:42:27

品牌	Logo	应用领域
德州仪器 - TI		传感器图像传感器
页数	文件大小	规格书
18页	240K
描述
1036- 】 1010-pixel ccd image sensor

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TC281 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.9
水平像素：	1010	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	45 °C	最低工作温度：	-10 °C
像素大小：	8X8 µm	电源：	13 V
子类别：	CCD Image Sensors	表面贴装：	NO
垂直像素：	1030	Base Number Matches：	1

TC281 数据手册

TC281

1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MAY 1999

High-Resolution, Solid-State

Frame-Transfer Image Sensor

SUB 1

ODB 2

IAG 3

22 SUB

21 TDB

20 IAG

11.3-mm Image Area Diagonal

1000 (H) x 1000 (V) Active Elements

Up to 30 Frames per Second

8-µm Square Pixels

SUB 4

19 SUB

18 SUB

17 SUB

16 NC

SAG 5

SAG 6

Low Dark Current

SUB 7

Advanced Lateral-Overflow-Drain

Antiblooming

OUT 8

15 SRG

14 TRG

13 VSOURCE

12 RST

Single Pulse Image Area Clear Capability

Dynamic Range . . . More than 60 dB

High Sensitivity and Quantum Efficiency

ADB 9

CDB 10

VGATE 11

Nondestructive Charge Detection Through

Texas Instruments (TI ) Advanced BCD

Node Technology

High Near-IR and Blue Response

Solid-State Reliability With No Image

Burn-In, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

description

The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides a very high-resolution

image acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis,

and metrology. The image sensing area measures 8 mm horizontally and 8 mm vertically; the image-area

diagonal measures 11,3 mm and the sensor has 8-µm square pixels. The image area contains 1000 active lines

with 1000 active pixels per line. The dark reference signal can be obtained from ten dark reference lines located

betweentheimageareaandthestoragearea, 28darkreferencepixelslocatedattheleftedgeofeachhorizontal

line, and 8 dark reference pixels located at the right edge of each horizontal line.

The storage section of the TC281 contains 1010 lines with 1036 pixels per line. The area is protected from

exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor can

be transferred into the storage section in less than 110 µs. After the image capture is completed (integration

time), the image readout is accomplished by transferring charge, one line at a time, into the serial register

located below the storage area. The serial register contains 1036 active pixels and 9 dummy pixels. The

maximum serial-register data rate is 40 megapixels per second. If the storage area needs to be cleared of all

charge, charge may be quickly transferred across the serial registers into the clearing drain located below the

A high performance bulk charge detection (BCD) structure converts charge from each pixel into an output

voltage. A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output

pin. A readout rate of 30 frames per second is easily achievable with this device.

The blooming-protection of the sensor is based on an advanced lateral-overflow-drain structure (ALOD). The

antiblooming function is activated when a suitable dc bias is applied to the overflow-drain pin. With this type of

blooming protection it is also possible to clear the image area of charge completely. This is accomplished by

providing a single 10V pulse of at least 1 µs duration to the overflow-drain pin.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

TI is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...18

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