Datasheet > TC2676

TC2676

更新时间： 2024-09-15 03:28:47

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
3页	186K
描述
2 W Low-Cost Packaged PHEMT GaAs Power FETs

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TC2676 数据手册

TC2676

REV4_20070906

2 W Low-Cost Packaged PHEMT GaAs Power FETs

FEATURES

l 2 W Typical Output Power at 6 GHz

l 9 dB Typical Linear Power Gain at 6 GHz

l High Linearity: IP3 = 43 dBm Typical at 6 GHz

l High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz

l Suitable for High Reliability Application

l Breakdown Voltage:BV_DGO³ 18 V

l Lg = 0.6 mm, Wg = 5 mm

PHOTO ENLARGEMENT

l Tight Vp ranges control

l High RF input power handling capability

l 100 % DC Tested

l Low Cost Ceramic Package

DESCRIPTION

The TC2676 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100%

DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for

commercial and military high performance power applications.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

Symbol

Conditions

MIN TYP MAX UNIT

P_1dBOutput Power at 1dB Gain Compression Point, f = 6 GHz V_DS= 8 V, I_DS= 500 mA

32.5

dBm

G_L

Linear Power Gain, f = 6 GHz V_DS= 8 V, I_DS= 500 mA

IP3

Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS= 8 V, I_DS= 500 mA, *P_SCL= 20 dBm

dBm

PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz

I_DSSSaturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

1.25

850

-1.7**

g_m

V_P

Transconductance at V_DS= 2 V, V_GS= 0 V

Pinch-off Voltage at V_DS= 2 V, I_D= 10 mA

Volts

°C/W

BV_DGODrain-Gate Breakdown Voltage at I_DGO=2.5 mA

R_thThermal Resistance

* P_SCL: Output Power of Single Carrier Level

** For the tight control of the pinch-off voltage range, we divide TC2676 into 3 model numbers to fit customer design requirement

(1)TC2676P1519 : Vp = -1.5V to -1.9V (2)TC2676P1620 : Vp = -1.6V to -2.0V (3)TC2676P1721 : Vp = -1.7V to -2.1V If

required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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