TC2696
REV4_20070507
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 2 W Typical Output Power at 6 GHz
• 10 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 43 dBm Typical at 6 GHz
• High Power Added Efficiency:
Nominal PAE of 43 % at 6 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO ≥ 18 V
• Lg = 0.6 µm, Wg = 5 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Flange Ceramic Package
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor
(PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high
dynamic range power amplifiers for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
MIN
TYP
33
MAX UNIT
Symbol
P1dB Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 500 mA
GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA
CONDITIONS
32.5
dBm
dB
10
IP3 Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 500 mA, *PSCL = 20 dBm
43
dBm
%
43
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
1.25
850
-1.7**
18
A
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
mS
gm
VP
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 10 mA
Volts
Volts
15
BVDGO Drain-Gate Breakdown Voltage at IDGO =2.5 mA
Rth Thermal Resistance
Note: * PSCL: Output Power of Single Carrier Level.
7
C/W
°
** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement
(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2