ꢀꢁ ꢂꢃ ꢄꢅ ꢆ ꢇ
ꢈ ꢉ ꢊ ꢋ ×ꢋꢃ ꢊ ꢊ ꢆꢌ ꢍꢎꢏ ꢁꢁꢇ ꢌꢐ ꢑꢒ ꢎ ꢅ ꢎꢓ ꢅ ꢔ ꢕ
SOCS062B – JANUARY 2001 – REVISED MAY 2002
DUAL-IN-LINE PACKAGE
(TOP VIEW)
D
D
Very Low Noise, High Sensitivity,
Electronically Variable
High Resolution, 1/3-in Format, Solid State
Charge-Coupled Device (CCD) Frame
Transfer Image Sensor for Black and White
National Television and Standard
Committee (NTSC) and Computer
Applications
ODB 1
IAG2 2
SAG2 3
SRG1 4
SRG2 5
CMG 6
IAG1
12
11
SAG1
10 SUB
D
D
D
340,000 Pixels per Field
Frame Memory
9
ADB
NC
656 (H) × 496 (V) Active Pixels in Image
Sensing Area Compatible With Electronic
Centering
8
7
D
Multimode Readout Capability
– Progressive Scan
– Interlace Scan
V
out
– Line Summing
D
D
High Photoresponse Uniformity from
Deep Ultraviolet (DUV) to Near Infrared
(NIR)
D
D
D
D
D
Fast Single-Pulse Clear Capability
Continuous Electronic Exposure Control
from 1/60 s to 1/5,000 s
7.4 µm Square Pixels
Solid State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
Advanced Lateral Overflow Drain
Low Dark Current
description
The TC253SPD device is a frame-transfer, CCD image sensor designed for use in black and white NTSC TV,
computer, and special-purpose applications that require high sensitivity, low noise, and small size.
The TC253SPD sensor is a new device of the IMPACTRONt family of very low noise, high sensitivity image
sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier
multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs
during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed
gates activates the CCM. The amount of multiplication is adjustable, depending on the amplitude of the
multiplication pulses. The device function resembles the function of image intensifiers implemented in solid
state.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to V . Under no
SS
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to V
during operation to prevent
SS
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
IMPACTRON is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
Copyright 2002, Texas Instruments Incorporated
ꢑ ꢇ ꢖꢑ ꢓꢁ ꢎ ꢌꢓ ꢗ ꢔꢕ ꢐꢑꢀꢌ ꢔ ꢓ ꢘꢙ ꢚꢘꢛ ꢜ ꢚꢝ ꢚꢛ ꢞ ꢟꢜ ꢙꢠ ꢡꢘꢢ ꢝ ꢣꢚ ꢢꢤ ꢛ ꢝꢥ ꢦꢟ ꢧꢣꢚꢨ ꢙꢜ
ꢟꢜ ꢛ ꢟ ꢜꢙ ꢠꢡ ꢘ ꢢꢣ ꢙꢚ ꢟꢤ ꢥ ꢝ ꢛ ꢙꢩ ꢠ ꢛꢪ ꢛꢧꢙ ꢟꢦꢛ ꢚꢢꢫ ꢁ ꢤꢥ ꢜꢥ ꢘꢢ ꢛꢜ ꢣꢝ ꢢꢣꢘ ꢠꢥ ꢢꢥ ꢥꢚ ꢠ ꢙꢢ ꢤꢛꢜ
ꢝ ꢟꢛ ꢘ ꢣ ꢩꢣ ꢘ ꢥ ꢢ ꢣꢙ ꢚꢝ ꢥ ꢜ ꢛ ꢝ ꢡꢬ ꢭꢛ ꢘ ꢢ ꢢꢙ ꢘꢤ ꢥꢚꢨ ꢛ ꢞ ꢣꢢꢤ ꢙꢡꢢ ꢚꢙꢢ ꢣꢘꢛ ꢫ
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5秒后页面跳转
SL74HC10N：高性能三输入与非门解析
AIC1781A 电池充电控制器深度解析
Pickering新高压舌簧继电器亮相汽车测试博览会
采用MCU+MPU双处理器架构实现的创新应用设计探索
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
