Datasheet > TBN6301E

TBN6301E

更新时间： 2024-09-13 03:28:55

品牌	Logo	应用领域
德州仪器 - TI		晶体晶体管
页数	文件大小	规格书
6页	224K
描述
NPN SILICON RF TRANSISTOR

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中文翻译

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数据手册

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TBN6301E 数据手册

Preliminary Specification

TBN6301 series

NPN SILICON RF TRANSISTOR

Unit in mm

SOT323

□ Applications

2.1±0.1

1.25±0.05

- UHF and VHF wide band amplifier

□ Features

- High gain bandwidth product

f_T= 6 GHz @ V_CE= 3 V, I_C= 10 mA

f_T= 7.5 GHz @ V_CE= 5 V, I_C= 20 mA

- High power gain

|S₂₁|²= 9 dB @ V_CE= 3 V, I_C= 10 mA, f = 1 GHz

- Low noise figure

0.1 Min.

NF = 1.4 dB @ V_CE= 3 V, I_C= 10 mA, f = 1 GHz

Pin Configuration (TBN6301U)

1. Base

2. Emitter

3. Collector

□ Absolute Maximum Ratings (T_A= 25 ℃)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_C

Ratings

Unit

℃

Total Power Dissipation

Operating Junction Temperature

Storage Temperature

P_tot

150

T_j

T_stg

-65 ~ 150

℃

Caution : Electro Static Discharge sensitive device

http://www.tachyonics.co.kr

Dec. 2005.

Rev. 1.0

Page 1 of 6

12 3 4 5 6

中文翻译

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