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TBN6301S PDF预览

TBN6301S

更新时间: 2024-11-01 03:28:55
品牌 Logo 应用领域
韩国光电子 - AUK 晶体晶体管
页数 文件大小 规格书
6页 213K
描述
Si NPN Transistor

TBN6301S 数据手册

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TBN6301 Series  
Semiconductor  
Si NPN Transistor  
Unit in mm  
SOT-323  
Applications  
2.1±0.1  
1.25±0.05  
- VHF and UHF wide band amplifier  
1
3
Features  
2
- High gain bandwidth product  
fT = 6 GHz at VCE = 3 V, IC = 10 mA  
fT = 7.5 GHz at VCE = 5 V, IC = 20 mA  
- High power gain  
|S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz  
- Low noise figure  
0.1 Min.  
NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz  
Pin Configuration  
1. Base  
2. Emitter  
3. Collector  
Absolute Maximum Ratings (TA = 25 )  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
IC  
Ratings  
Unit  
20  
8
V
V
V
3
75  
mA  
mW  
Total Power Dissipation  
Operating Junction Temperature  
Storage Temperature  
Ptot  
150  
150  
Tj  
Tstg  
-65 ~ 150  
Caution : Electro Static Discharge sensitive device  
1

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